TITLE

Strain-induced growth of SiO[sub 2] dots by liquid phase deposition

AUTHOR(S)
Liu, C. W.; Hsu, B.-C.; Chen, K.-F.; Lee, M. H.; Shie, C.-R.; Chen, Pang-Shiu
PUB. DATE
January 2003
SOURCE
Applied Physics Letters;1/27/2003, Vol. 82 Issue 4, p589
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Silicon dioxide dots are deposited on the Si cap layers of self-assembled Ge dots using a liquid phase deposition method. The Si capping layer directly above the Ge dots has a tensile strain, while the Si cap on the wetting layer is not strained. The tensile strain can enhance the silicon dioxide nucleation and deposition on Si surface, and SiO[sub 2] dots are directly formed on the top of Ge dots with the SiO[sub 2] wetting layers between the dots. The step height and base width of the dots increase with the deposition time. A metal-oxide-semiconductor photodetector is fabricated using the liquid-phase-deposited oxide, and has a responsivity of 0.08 mA/W at 1550 nm.
ACCESSION #
8954569

 

Related Articles

  • LIQUID GLASS.  // Technotrends Newsletter;Feb2010, Vol. 26 Issue 2, p3 

    The article offers information on liquid glass, a spray of silicon dioxide (SiO2) with water or ethanol on coating to protect fabrics and plants from ultraviolet rays, heat and bacteria.

  • Optical band gap and ultralow dielectric constant materials prepared by a simple dip coating process. Iskandar, Ferry; Abdullah, Mikrajuddin; Yoden, Hiroyoshi; Okuyama, Kikuo // Journal of Applied Physics;6/1/2003, Vol. 93 Issue 11, p9237 

    A simple procedure for producing silica films containing ordered porous silica films, with pore sizes in the range of 40–1000 nm, is described. The precursors were prepared by mixing polystyrene latex (PSL) colloidal spheres and silica nanoparticles. The precursors were dipped vertically...

  • Tiny Particles, Huge Effect.  // Paint & Coatings Industry;Oct2003, Vol. 19 Issue 10, p46 

    Presents information on the applications of nanotechnological-reinforced composites. Uses of inorganic fillers; Suitability of silica nanoparticles for industrial use; Comparison of rheological properties of fumed silica and nanoscaled silica.

  • Multimodal impurity redistribution and nanocluster formation in Ge implanted silicon dioxide films. von Borany, J.; Grotzschel, R. // Applied Physics Letters;12/1/1997, Vol. 71 Issue 22, p3215 

    Examines the depth distribution of germanium (Ge) implanted into thermally grown SiO[sub 2] films. Discovery of the redistribution of the as-implanted Ge profile; Formation of the crystalline Ge nanoclusters; Discussion of the evolution of nanoclusters.

  • Photoluminescence of Ge nanoparticles embedded in SiO[sub 2] glasses fabricated by a sol–gel method. Yang, Heqing; Wang, Xingjun; Shi, Huazhong; Xie, Songhai; Wang, Fujian; Gu, Xiaoxiao; Yao, Xi // Applied Physics Letters;12/30/2002, Vol. 81 Issue 27, p5144 

    Ge nanoparticles with different sizes in silica glasses were prepared by a sol-gel method using Cl[sub 3]- Ge-C[sub 2]H[sub 4]- COOH as a Ge source. The size of the Ge nanoparticles decreases with a reduction in the content of Ge in the starting materials, and thus the optical absorption edge...

  • Energy states of Ge-doped SiO2 glass estimated through absorption and photoluminescence. Fujimaki, Makoto; Okhi, Yoshimichi // Journal of Applied Physics;2/1/1997, Vol. 81 Issue 3, p1042 

    Discusses the energy states of oxygen-deficient type defects in the vacuum ultraviolet region using Ge-doped silica glasses. Vacuum ultraviolet absorption; Temperature dependence of photoluminescence (PL) intensities; Lifetimes of the PLs.

  • Linear and third-order nonlinear optical absorption of amorphous Ge nanoclusters embedded in Al[sub 2]O[sub 3] matrix synthesized by electron-beam coevaporation. Wan, Q.; Lin, C. L.; Zhang, N. L.; Liu, W. L.; Yang, G.; Wang, T. H. // Applied Physics Letters;5/12/2003, Vol. 82 Issue 19, p3162 

    Amorphous germanium (α-Ge) nanoclusters embedded in Al[SUB2]O[SUB3] matrix are synthesized on fused-quartz glass substrate at room temperature by vacuum electron-beam coevaporation. Linear optical transmittance measurements reveal an indirect optical absorption edge with a blueshift as large...

  • Resonance Raman Scattering in Ge Nanoislands Grown on a Si(111) Substrate Coated with an Ultrathin SiO[sub 2] Layer. Volodin, V.A.; Efremov, M.D.; Nikiforov, A.I.; Orekhov, D.A.; Pchelyakov, O.P.; Ul'yanov, V.V. // Semiconductors;Oct2003, Vol. 37 Issue 10, p1190 

    Germanium nanoislands formed on a Si (111) surface coated with an ultrathin oxide layer were investigated by Raman spectroscopy. For analysis of the experimental data, the spectra of real islands containing some hundreds of Ge atoms were calculated numerically. The effects of the resonance...

  • High temperature proton implantation induced photosensitivity of Ge-doped SiO[sub 2] planar... Hughes, P. J.; Knights, A. P. // Applied Physics Letters;5/31/1999, Vol. 74 Issue 22, p3311 

    Explores the possibility of using high temperature proton implantation to enhance the photosensitivity of germanium-doped silica planar waveguides. Defects induced by room temperature implantation; Hydrogenation techniques used to enhance the concentration of neutral oxygen vacancy centers.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics