Strain-induced growth of SiO[sub 2] dots by liquid phase deposition

Liu, C. W.; Hsu, B.-C.; Chen, K.-F.; Lee, M. H.; Shie, C.-R.; Chen, Pang-Shiu
January 2003
Applied Physics Letters;1/27/2003, Vol. 82 Issue 4, p589
Academic Journal
Silicon dioxide dots are deposited on the Si cap layers of self-assembled Ge dots using a liquid phase deposition method. The Si capping layer directly above the Ge dots has a tensile strain, while the Si cap on the wetting layer is not strained. The tensile strain can enhance the silicon dioxide nucleation and deposition on Si surface, and SiO[sub 2] dots are directly formed on the top of Ge dots with the SiO[sub 2] wetting layers between the dots. The step height and base width of the dots increase with the deposition time. A metal-oxide-semiconductor photodetector is fabricated using the liquid-phase-deposited oxide, and has a responsivity of 0.08 mA/W at 1550 nm.


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