TITLE

Local probing of thermal properties at submicron depths with megahertz photothermal vibrations

AUTHOR(S)
Tomoda, M.; Shiraishi, N.; Kolosov, O. V.; Wright, O. B.
PUB. DATE
January 2003
SOURCE
Applied Physics Letters;1/27/2003, Vol. 82 Issue 4, p622
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We demonstrate the imaging of buried features in a microstructure—a tiny hole in an aluminum thin film covered by a chromium layer—with nanometer lateral resolution using a transient temperature distribution restricted to within ∼0.5 µm of the sample surface. This is achieved by mapping photothermally induced megahertz surface vibrations in an atomic force microscope. Local thermal probing with megahertz-frequency thermal waves is thus shown to be a viable method for imaging subsurface thermal features at submicron depths.
ACCESSION #
8954558

 

Related Articles

  • Coercitivity and its temperature dependence in NdFeB thin films with Cr, Mo, Ti, or Ta buffer layers. Jiang, H.; O’Shea, M. J. // Journal of Applied Physics;5/1/2000, Vol. 87 Issue 9, p6131 

    NdFeB thin films of the form A(20 nm)/NdFeB(d nm)/A(20 nm) were prepared by magnetron sputtering on a Si(100) substrate. The hard Nd[sub 2]Fe[sub 14]B phase is formed by a postanneal in vacuum. The buffer layers A used are Cr, Mo, Ta, Ti, and NdFeB layer thickness used are 540, 180, 90, and 54...

  • Magnetic properties and microstructure of Ag2Se/FePt particulate films. Tsai, Jai-Lin; Tai, Hsueh-Wei; Tzeng, Hsin-Te // Journal of Applied Physics;Apr2011, Vol. 109 Issue 7, p07A713 

    Multilayer Ag/[Ag2Se(t)/FePt(1nm)]10 (thickness t = 0.1-0.4 nm) were alternately deposited on a glass substrate and subsequently annealed by rapid thermal process (RTP) at 800 °C for 3 min. After RTP, the interface between FePt and Ag2Se was intermixed to form particulate films. The grains...

  • Microstructure and electrical resistivity of Cu and Cu...Ge thin films on ... alloy layers. Aboelfotoh, M. O.; Borek, M. A. // Journal of Applied Physics;1/1/2000, Vol. 87 Issue 1, p365 

    Presents information on a study on the reaction between Cu and ... thin films and ... alloy layers epitaxially grown on Si(100) in the temperature of 250-400 degree Celsius. Experimental procedure; Results and discussion; Conclusion.

  • Influence of thermal treatment on the microstructure and electrical and optical properties of SnS thin films. Bashkirov, S.; Gladyshev, P.; Gremenok, V.; Ivanov, V. // Physics of the Solid State;Jul2014, Vol. 56 Issue 7, p1310 

    The influence of thermal treatment on the microstructure and electrical and optical properties of SnS films obtained by the 'hot-wall' method has been investigated. It has been established that the thermal treatment does not lead to the formation of foreign phases in the film composition. The...

  • Effect of Thermal Treatment of PbTe Films on their IR Spectra and Surface Structure. Shimko, A.; Malashkevich, G.; Freik, D.; Nykyruy, L.; Lytovchenko, V. // Journal of Applied Spectroscopy;Jan2014, Vol. 80 Issue 6, p950 

    This is a study of n-type PbTe films produced by deposition from gas-dynamic vapor flows onto glass substrates. It is found that short-term steady heating of these films at 300-400°C in air causes significant changes in their spectral and structural properties because of competition between...

  • Microstructural, Thermal and Antibacterial Properties of Electron Beam Irradiated Bombyx mori Silk Fibroin Films. Asha, S.; Sangappa; Naik, Prashantha; Chandra, K. Sharat; Sanjeev, Ganesh // AIP Conference Proceedings;2014, Vol. 1591, p219 

    The Bombyx mori silk fibroin (SF) films were prepared by solution casting method and the effects of electron beam on structural, thermal and antibacterial responses of the prepared films were studied. The electron irradiation for different doses was carried out using 8 MeV Microtron facility at...

  • Thermally stable, soft FeXN thin films. Liu, Yi-Kuang; Yi-Kuang Liu; Kryder, M. H.; Kryder, M.H. // Applied Physics Letters;7/17/2000, Vol. 77 Issue 3 

    Significant improvement of the thermal stability in FeXN (X=Al, Zr, Ta,...) thin films is reported. Sputtered at the reduced target-substrate spacing of 38 mm, 200-nm-thick thermally stable FeXN thin films are obtained. They have hard-axis coercivity approx. 0.1-2.0 Oe, easy-axis coercivity...

  • Microwave-induced low-temperature crystallization of amorphous silicon thin films. Lee, Jeong No; Choi, Yong Woo // Journal of Applied Physics;9/15/1997, Vol. 82 Issue 6, p2918 

    Investigates the effect of deposition temperature on crystallization behavior of amorphous silicon thin films. Schematic diagram for microwave heating equipment; Measured grain size in the crystallized films as a function of deposition temperature; Comparison of Raman spectra of the as-deposited...

  • Temperature dependence of the growth front roughening of oligomer films. Tsamouras, D.; Palasantzas, G. // Applied Physics Letters;6/17/2002, Vol. 80 Issue 24, p4528 

    Growth front roughening characteristics of vacuum deposited pentamer 2,5-di-n-octyloxy-1,4-bis[4-(styryl)styryl]-benzene oligomer thin films, onto silicon substrates, strongly depend on the substrate temperature in the range ∼20 °C-100 °C. The measured roughness exponents H increase...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics