Crystallographic dependence of the lateral undercut wet etching rate of InGaP in HCl

Cich, M. J.; Johnson, J. A.; Peake, G. M.; Spahn, O. B.
January 2003
Applied Physics Letters;1/27/2003, Vol. 82 Issue 4, p651
Academic Journal
The crystallographic dependence of the lateral etch rate in 12 M HCl of InGaP lattice matched to GaAs has been measured. The etch rate at 20 °C is found to have twofold rotational symmetry about [100] and varies between <0.01 µm/min for mesas oriented along 〈011〉 directions and ∼0.9 µm/min for mesas 55° and 125° from [011] towards [0&1macr;1]. Etch fronts consist of {111}A planes. The etch rate also depends on the direction of etch step flow, suggesting that reconstruction plays an important role during InGaP wet etching.


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