TITLE

High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric

AUTHOR(S)
Nayak, Pradipta K.; Hedhili, M. N.; Cha, Dongkyu; Alshareef, H. N.
PUB. DATE
July 2013
SOURCE
Applied Physics Letters;7/15/2013, Vol. 103 Issue 3, p033518
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report high performance solution-deposited indium oxide thin film transistors with field-effect mobility of 127 cm2/Vs and an Ion/Ioff ratio of 106. This excellent performance is achieved by controlling the hydroxyl group content in chemically derived aluminum oxide (AlOx) thin-film dielectrics. The AlOx films annealed in the temperature range of 250-350 °C showed higher amount of Al-OH groups compared to the films annealed at 500 °C, and correspondingly higher mobility. It is proposed that the presence of Al-OH groups at the AlOx surface facilitates unintentional Al-doping and efficient oxidation of the indium oxide channel layer, leading to improved device performance.
ACCESSION #
89266350

 

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