High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric

Nayak, Pradipta K.; Hedhili, M. N.; Cha, Dongkyu; Alshareef, H. N.
July 2013
Applied Physics Letters;7/15/2013, Vol. 103 Issue 3, p033518
Academic Journal
We report high performance solution-deposited indium oxide thin film transistors with field-effect mobility of 127 cm2/Vs and an Ion/Ioff ratio of 106. This excellent performance is achieved by controlling the hydroxyl group content in chemically derived aluminum oxide (AlOx) thin-film dielectrics. The AlOx films annealed in the temperature range of 250-350 °C showed higher amount of Al-OH groups compared to the films annealed at 500 °C, and correspondingly higher mobility. It is proposed that the presence of Al-OH groups at the AlOx surface facilitates unintentional Al-doping and efficient oxidation of the indium oxide channel layer, leading to improved device performance.


Related Articles

  • A high-K ferroelectric relaxor terpolymer as a gate dielectric for organic thin film transistors. Wu, Shan; Shao, Ming; Burlingame, Quinn; Chen, Xiangzhong; Lin, Minren; Xiao, Kai; Zhang, Q. M. // Applied Physics Letters;1/7/2013, Vol. 102 Issue 1, p013301 

    Poly(vinylidenefluoride-trifluoroethylene-chlorofluoroethylene) (P(VDF-TrFE-CFE)) is a ferroelectric terpolymer relaxor with a static dielectric constant of 50, which was developed using defect modification to eliminate remnant polarization in the normal ferroelectric PVDF. In this work, this...

  • O-vacancy as the origin of negative bias illumination stress instability in amorphous In–Ga–Zn–O thin film transistors. Byungki Ryu; Hyeon-Kyun Noh; Eun-Ae Choi; Chang, K. J. // Applied Physics Letters;7/12/2010, Vol. 97 Issue 2, p022108 

    We find that O-vacancy (VO) acts as a hole trap and plays a role in negative bias illumination stress instability in amorphous In–Ga–Zn–O thin film transistors. Photoexcited holes drift toward the channel/dielectric interface due to small potential barriers and can be...

  • Bendable single crystal silicon thin film transistors formed by printing on plastic substrates. Menard, E.; Nuzzo, R. G.; Rogers, J. A. // Applied Physics Letters;2/28/2005, Vol. 86 Issue 9, p093507 

    Bendable, high performance single crystal silicon transistors have been formed on plastic substrates using an efficient dry transfer printing technique. In these devices, free standing single silicon objects, which we refer to as microstructured silicon (μs-Si), are picked up, using a...

  • Mechanical and electrical evaluation of parylene-C encapsulated carbon nanotube networks on a flexible substrate. Chia-Ling Chen; Lopez, Ernesto; Yung-Joon Jung; Müftü, Sinan; Selvarasah, Selvapraba; Dokmeci, Mehmet R. // Applied Physics Letters;9/1/2008, Vol. 93 Issue 9, p093109 

    Carbon nanotube networks are an emerging conductive nanomaterial with applications including thin film transistors, interconnects, and sensors. In this letter, we demonstrate the fabrication of single-walled carbon nanotube (SWNT) networks on a flexible polymer substrate and then provide...

  • Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors. Jeong-Min Lee; In-Tak Cho; Jong-Ho Lee; Hyuck-In Kwon // Applied Physics Letters;9/1/2008, Vol. 93 Issue 9, p093504 

    The experimental and modeling study of bias-stress-induced threshold voltage instabilities in amorphous indium-gallium-zinc oxide thin film transistors is reported. Positive stress results in a positive shift in the threshold voltage, while the transfer curve hardly moves when negative stress is...

  • Spin-coatable inorganic gate dielectric for organic thin-film transistors. Keon-kook Han; S. Young Park; M. Joon Kim; Lee, Hong H. // Applied Physics Letters;12/19/2005, Vol. 87 Issue 25, p253502 

    Polymer gate dielectrics have been used for organic thin-film transistors (OTFTs) primarily because of wet processability. An inorganic dielectric, if it is wet processable, can remedy many problems associated with a polymer dielectric. A siloxane-based spin-on glass is used to show that it can...

  • Influence of phase transitions on the excitonic absorption spectrum of K2CdI4. Yunakova, O. N.; Miloslavsky, V. K.; Kovalenko, E. N. // Low Temperature Physics;Feb2005, Vol. 31 Issue 2, p168 

    The absorption spectrum of thin films of K2CdI4 in the energy interval 3.6–5.1 eV is investigated on heating and cooling in the temperature range 90–430 K. The temperature dependence of the spectral position Em(T) and half-width Γ(T) of the long-wavelength exciton band in...

  • Performance improvement in transparent organic thin-film transistors with indium tin oxide/fullerene source/drain contact. Yu-Chang Li; Yu-Ju Lin; Chia-Yu Wei; Zheng-Xian Lin; Ten-Chin Wen; Mei-Ying Chang; Cheng-Liang Tsai; Yeong-Her Wang // Applied Physics Letters;10/19/2009, Vol. 95 Issue 16, p163303 

    With the use of fullerene (C60)/indium tin oxide (ITO) source/drain electrode, the performance of a transparent thin-film transistor could be enhanced dramatically. The drain current can be increased by a factor of more than 5. The improvements are attributed to the reduction of the injection...

  • A study on the carrier injection mechanism of the bottom-contact pentacene thin film transistor. Keum-Dong Jung; Yoo Chul Kim; Hyungcheol Shin; Byung-Gook Park; Jong Duk Lee; Eou Sik Cho; Sang Jik Kwon // Applied Physics Letters;3/8/2010, Vol. 96 Issue 10, p103305 

    For an analysis of the mechanism of carrier injection in the structure of bottom contact organic thin-film transistor (OTFT), Al blocking layer was applied to the source/drain electrode in variety of ways in the fabrication of bottom contact OTFT. From the comparison of the transfer...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics