TITLE

Stress analysis of Al[sub x]Ga[sub 1-x]N films with microcracks

AUTHOR(S)
Rudloff, D.; Riemann, T.; Christen, J.; Liu, Q. K. K.; Kaschner, A.; Hoffmann, A.; Thomsen, Ch.; Vogeler, K.; Diesselberg, M.; Einfeldt, S.; Hommel, D.
PUB. DATE
January 2003
SOURCE
Applied Physics Letters;1/20/2003, Vol. 82 Issue 3, p367
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Thick Al[SUBx]Ga[SUB1-x]N epilayer with microcracks grown by metalorganic vapor-phase epitaxy on a GaN buffer above a (0001) sapphire substrate was comprehensively characterized by spatially and spectrally resolved cathodoluminescence (CL) and micro-Raman (μ-Raman) spectroscopy. The variation of the CL line shift and the μ-Raman measurements between the microcracks are consistent with the interpretation that AlGaN is to a large extent stressed like a two dimensional film between the microcracks with nearly full relaxation close to the cracks. A satisfactory theoretical confirmation of this stress distribution was obtained by a three-dimensional finite-element application of the elasticity theory.
ACCESSION #
8926075

 

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