Temperature dependence of free-exciton luminescence in cubic CdS films

Kanemitsu, Yoshihiko; Nagai, Takehiko; Yamada, Yoichi; Taguchi, Tsunemasa
January 2003
Applied Physics Letters;1/20/2003, Vol. 82 Issue 3, p388
Academic Journal
Free-exciton photoluminescence(PL) properties of cubic CdS films on GaAs substrates have been studied by means of picosecond time-resolved PL spectrum measurements. A PL band appears at the light-hole exciton energy in strained CdS films. The linewidth of the free-exciton PL is determined by the inhomogeneous strains and the exciton-phonon interactions. At high temperatures above 80 K, the linewidth of the exciton luminescence drastically increases and the exciton-optical-phonon interaction is the dominant scattering process. The temperature dependence of free-exciton luminescence has been determined for cubic CdS films.


Related Articles

  • Photoluminescence of Cd1-xMnxTe films grown by metalorganic chemical vapor deposition. Feng, Z. C.; Perkowitz, S.; Sudharsanan, R.; Erbil, A.; Pollard, K. T.; Rohatgi, A.; Bradshaw, J. L.; Choyke, W. J. // Journal of Applied Physics;8/15/1989, Vol. 66 Issue 4, p1711 

    Examines cadmium-manganese-tellurium (CMT) films grown by metalorganic chemical vapor deposition on gallium arsenide (GaAs), cadmium telluride/GaAs and cadmium sulphide/silicon dioxide glass. Use of Raman scattering and infrared spectroscopies; Stress in the CMT films; Findings of the...

  • Fluorescence Properties of Hybrid CdTe Quantum Dots-Porphyrins Thin Films in Organic Vapors. Bakar, Norhayati Abu; Rahmi, Aidhia; Umar, Akrajas Ali; Salleh, Muhamad Mat; Yahaya, Muhammad // AIP Conference Proceedings;10/24/2010, Vol. 1284 Issue 1, p64 

    This paper reports a study on the fluorescence properties of thin films utilizing quantum dots (QDs) of cadmium telluride (CdTe) hybridized with porphyrins (tetraphenyl porphine cobalt (II)) (CoTTP) thin films under exposure of various gases. The high yellow luminescence QDs were synthesized...

  • Optical and electrical properties of Zn1-xCdxO films grown on Si substrates by reactive radio-frequency magnetron sputtering. Sun, C. W.; Xin, P.; Ma, C. Y.; Liu, Z. W.; Zhang, Q. Y.; Wang, Y. Q.; Yin, Z. J.; Huang, S.; Chen, T. // Applied Physics Letters;10/30/2006, Vol. 89 Issue 18, p181923 

    Zn1-xCdxO films (0≤=x≤=0.179) were grown on Si (001) substrates at 750 °C with a radio-frequency reactive magnetron sputtering method. Difference between the photoluminescence (PL) spectra taken at room temperature (RT) and at 12 K is reported and is deduced to be the result of PL...

  • Excitation-wavelength-dependent photoluminescence evolution of CdSe/ZnS nanoparticles. Ozasa, Kazunari; Nemoto, Shigeyuki; Maeda, Mizuo; Hara, Masahiko // Journal of Applied Physics;5/15/2007, Vol. 101 Issue 10, p103503 

    The wavelength-dependent photoluminescence (PL) evolution of CdSe/ZnS (core/shell) nanoparticles (NPs) was investigated from the viewpoint of excitation wavelength dependence. In addition, the mechanisms involved in the photoinduced changes of the NP PL spectrum are discussed. The NPs of...

  • Influence of Mn doping on structural, optical and photoluminescence properties of CdCoS thin films by chemical bath deposition method. Hemathangam, S.; Thanapathy, G.; Muthukumaran, S. // Journal of Materials Science: Materials in Electronics;Feb2016, Vol. 27 Issue 2, p1791 

    CdCoS and Mn-doped CdCoS thin films have been successfully deposited on glass slides using aqueous ammonia solution at pH = 9.5 by chemical bath deposition method. X-ray diffraction pattern showed the cubic phase of the deposited films which was not affected by Mn-doping. Reduced crystallite...

  • Single-crystalline rocksalt CdO layers grown on GaAs (001) substrates by metalorganic molecular-beam epitaxy. Ashrafi, A. B. M. A.; Kumano, H.; Suemune, I.; Ok, Y.-W.; Seong, T.-Y. // Applied Physics Letters;7/23/2001, Vol. 79 Issue 4 

    In this letter, we report the growth of single-crystalline rocksalt CdO layers on (001) GaAs substrates using ZnS buffer layers. The growth processes of CdO layers were studied by reflection high-energy electron diffraction (RHEED), and the grown CdO layers were evaluated with atomic force...

  • Anomalous photovoltage in Cd0.80Zn0.20Te thin films. Samanta, B.; Chaudhuri, A. K.; Sharma, S. L.; Pal, U. // Journal of Applied Physics;3/1/1994, Vol. 75 Issue 5, p2733 

    Studies the mechanism of anomalous photovoltage in cadmium compound thin films. Models used in the study of anomalous photovoltage; Preparation of the thin films; Discussion on the results of the study.

  • Measurement and control of ion-doping-induced defects in cadmium telluride films. Kim, Donghwan; Fahrenbruch, Alan L.; Lopez-Otero, Adolfo; Bube, Richard H.; Jones, Kim M. // Journal of Applied Physics;3/1/1994, Vol. 75 Issue 5, p2673 

    Studies the measurement and control of ion-doping-induced defects in cadmium telluride thin films. Applications of cadmium telluride; Details on the experiment; Discussion on the results of the study.

  • Structural, optical, photoluminescence, dielectric and electrical studies of vacuum-evaporated CdTe thin films. KHAN, ZIAUL; ZULFEQUAR, M; KHAN, MOHD. // Bulletin of Materials Science;Apr2012, Vol. 35 Issue 2, p169 

    Highly-oriented CdTe thin films were fabricated on quartz and glass substrates by thermal evaporation technique in the vacuum of about 2 × 10 torr. The CdTe thin films were characterized by X-ray diffraction (XRD), UV-VIS-NIR, photoluminescence spectroscopy and scanning electron microscopy...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics