Microelectromechanical displacement sensing using InAs/AlGaSb heterostructures

Yamaguchi, Hiroshi; Miyashita, Sen; Hirayama, Yoshiro
January 2003
Applied Physics Letters;1/20/2003, Vol. 82 Issue 3, p394
Academic Journal
We fabricated self-sensing microelectromechanical displacement sensors from InAs/AlGaSb heterostructures. The sensitivity increased with reduced InAs thickness showing that the piezoresistivity was strongly enhanced when the quantum level approached to the pinning position of surface Fermi level. The high-sensitivity allowed us to detect a subangstrom displacement induced by thermal vibration of cantilevers.


Related Articles

  • Micromechanical resonators fabricated from lattice-matched and etch-selective GaAs/InGaP/GaAs heterostructures. Shim, Seung Bo; Chun, June Sang; Kang, Seok Won; Cho, Sung Wan; Cho, Sung Woon; Park, Yun Daniel; Mohanty, Pritiraj; Kim, Nam; Kim, Jinhee // Applied Physics Letters;9/24/2007, Vol. 91 Issue 13, p133505 

    Utilizing lattice-matched GaAs/InGaP/GaAs heterostructures, clean micromechanical resonators are fabricated and characterized. The nearly perfect selectivity of GaAs/InGaP is demonstrated by realizing paddle-shaped resonators, which require significant lateral etching of the sacrificial layer....

  • New generation of highly stable high-temperature microelectromechanical transducers based on a silicon-on-isolator heterostructure. L. Sokolov // Measurement Techniques;Sep2009, Vol. 52 Issue 9, p947 

    Some aspects are considered for creating a new generation of microelectromechanical transducers based on a silicon-on-isolator heterostructure with a monolithic integral tensoframe based on analyzing physicomechanical problems that restrain an increase in the technical level of semiconductor...

  • Strong magnetoelectric coupling in Tb–Fe/Pb(Zr0.52Ti0.48)O3 thin-film heterostructure prepared by low energy cluster beam deposition. Zhao, Shifeng; Wu, Yujie; Wan, Jian-guo; Dong, XinWei; Liu, Jun-ming; Wang, Guanghou // Applied Physics Letters;1/7/2008, Vol. 92 Issue 1, p012920 

    The magnetoelectric Tb–Fe/Pb(Zr0.52Ti0.48)O3 thin-film heterostructure was prepared by low energy cluster beam deposition. The microstructures, ferroelectric property, leakage current, and magnetization, as well as magnetoelectric effect were investigated for the heterostructure. It is...

  • (Pb,Ca)TiO3/(Pb,La)TiO3/(Pb,Ca)TiO3 heterostructure characterized as ferroelectric multifunctional material. Poyato, Rosalia; Calzada, M. Lourdes; Pardo, Lorena // Journal of Applied Physics;2/1/2005, Vol. 97 Issue 3, p034108 

    Ferroelectric thin films are multifunctional materials with applications in a wide range of microelectronic and microelectromechanical devices. The recent investigations on multilayer heterostructures builtup with ferroelectric layers of different compositions have shown an enhancement of the...

  • Interdigital transducers with control gates on AlGaN/GaN heterostructures. Shigekawa, Naoteru; Nishimura, Kazumi; Suemitsu, Tetsuya; Yokoyama, Haruki; Hohkawa, Kohji // Applied Physics Letters;7/17/2006, Vol. 89 Issue 3, p033501 

    We investigated surface acoustic wave (SAW) filters composed of interdigital transducers with control gates formed on AlGaN/GaN heterostructures. The contribution of SAWs appeared in the rf characteristics of the SAW filters when reverse-bias voltages were applied to the control gates and the...

  • Monocrystalline AlxGa1-xAs heterostructures for high-reflectivity high-Q micromechanical resonators in the megahertz regime. Cole, Garrett D.; Gröblacher, Simon; Gugler, Katharina; Gigan, Sylvain; Aspelmeyer, Markus // Applied Physics Letters;6/30/2008, Vol. 92 Issue 26, p261108 

    We present high-performance megahertz micromechanical oscillators based on freestanding epitaxial AlxGa1-xAs distributed Bragg reflectors. Compared with dielectric reflectors, the low mechanical loss of the monocrystalline heterostructure gives rise to significant improvements in the achievable...

  • Magnetron sputtered CuN/NiTiCu shape memory thin film heterostructures for MEMS applications. Kaur, Navjot; Choudhary, Nitin; Goyal, Rajendra; Viladkar, S.; Matai, I.; Gopinath, P.; Chockalingam, S.; Kaur, Davinder // Journal of Nanoparticle Research;Mar2013, Vol. 15 Issue 3, p1 

    In the present study, for the first time, CuN/NiTiCu/Si heterostructures were successfully grown using magnetron sputtering technique. Nanocrystalline copper nitride (CuN with thickness ~200 nm) thin films and copper nanodots were subsequently deposited on the surface of 2-μm-thick NiTiCu...

  • Energy band engineering for photoelectrochemical etching of GaN/InGaN heterostructures. Ramesh, Prashanth; Krishnamoorthy, Sriram; Rajan, Siddharth; Washington, Gregory N. // Applied Physics Letters;6/16/2014, Vol. 104 Issue 24, p1 

    Photoelectrochemical (PEC) etching is a rapid and inexpensive means of etching GaN, InGaN, and related materials for micro-electro-mechanical systems (MEMS) applications. In this work, we show that bandgap engineering of GaN/InGaN heterostructures can be used to exert substantial control over...

  • Exchange bias effect in NiMnSb/CrN heterostructures deposited by magnetron sputtering. Sharma Akkera, Harish; Barman, Rahul; Kaur, Navjot; Choudhary, Nitin; Kaur, Davinder // Journal of Applied Physics;May2013, Vol. 113 Issue 17, p17D723 

    Exchange bias has been studied in various Ni50Mn36.8Sb13.2/CrN heterostructures with different CrN thicknesses (15 nm-80 nm), grown on Si (100) substrate using magnetron sputtering. The shift in hysteresis loop up to 51 Oe from the origin was observed at 10 K for Ni-Mn-Sb film without CrN layer....


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics