Electrical field effect of H-implantation induced defect states in GaN

Krtschil, A.; Kielburg, A.; Witte, H.; Krost, A.; Christen, J.; Wenzel, A.; Rauschenbach, B.
January 2003
Applied Physics Letters;1/20/2003, Vol. 82 Issue 3, p403
Academic Journal
Gallium nitride layers grown by metalorganic vapor phase epitaxy on sapphire substrates were implanted with 20 keV hydrogen ions with fluences between 2 × 10[SUP14] and 2 × 10[SUP15]ions per cm[SUP2]. The resulting deep level spectrum was analyzed by deep level transient as well as by admittance spectroscopy. Beside several electron traps of probably intrinsic nature already known from other implantation experiments, a group of defects exclusively appeared after hydrogen implantation showing a strong electrical field effect in the corresponding emission characteristics. These peculiar states were characterized in detail and compared with defects showing a similar field effect already observed by other groups, suggesting the interpretation as hydrogen-decorated dislocations.


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