TITLE

Ferroelectric properties of Bi[sub 3.25]La[sub 0.75]Ti[sub 3]O[sub 12] thin films grown on the highly oriented LaNiO[sub 3] buffered Pt/Ti/SiO[sub 2]/Si substrates

AUTHOR(S)
Zhai, Jiwei; Chen, Haydn
PUB. DATE
January 2003
SOURCE
Applied Physics Letters;1/20/2003, Vol. 82 Issue 3, p442
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Bi[SUB3.25]La[SUB0.75]Ti[SUB3]O[SUB12] (BLT) thin films were grown on Pt/Ti/SiO[SUB2]/Si and on LaNiO[SUB3] (LNO) buffered (Pt/Ti/SiO[SUB2]/Si substrates using sol-gel processing. Scanning electron micrographs showed the BLT films are composed of peg-like or platelet-like grains depending upon annealing temperature and the substrate type. Large platelet grains were found in BLT films deposited on the LNO/Pt/Ti/SiO[SUB2]/Si substrates; those thin films showed better polarization-voltage, capacitance-voltage, and current-voltage characteristics. More importantly, they did not show any significant fatigue up to 2 × 10[SUP10] switching cycles at a frequency of 1 MHz and electric field 85 kV/cm.
ACCESSION #
8926049

 

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