Enhanced dynamic annealing in Ga[sup +] ion-implanted GaN nanowires

Dhara, S.; Datta, A.; Wu, C. T.; Lan, Z. H.; Chen, K. H.; Wang, Y. L.; Chen, L. C.; Hsu, C. W.; Lin, H. M.; Chen, C. C.
January 2003
Applied Physics Letters;1/20/2003, Vol. 82 Issue 3, p451
Academic Journal
Ga[SUP+]ion implantation of chemical-vapor-deposited GaN nanowires (NWs) is studied using a 50-keV Ga[SUP+]focused ion beam. The role of dynamic annealing (defect-annihilation) is discussed with an emphasis on the fluence-dependent defect structure. Unlike heavy-ion-irradiated epitaxial GaN film, large-scale amorphization is suppressed until a very high fluence of 2 ×10[SUP16] ions cm[SUP-2]. In contrast to extended-defects as reported for heavy-ion-irradiated epitaxial GaN film, point-defect clusters are identified as major component in irradiated NWs. Enhanced dynamic annealing induced by high diffusivity of mobile point-defects in the confined geometry of NWs is identified as the probable reason for observed differences.


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