Bright single-active layer small-molecular organic light-emitting diodes with a polytetrafluoroethylene barrier

Gao, Yudi; Wang, Liduo; Zhang, Deqiang; Duan, Lian; Dong, Guifang; Qiu, Yong
January 2003
Applied Physics Letters;1/13/2003, Vol. 82 Issue 2, p155
Academic Journal
Single-layer organic light-emitting diodes (OLEDs) with a small molecule, tris(8-hydroxyquinoline) aluminum (Alq[sub 3]) as the only active material, have been prepared. In order to achieve an efficient hole injection, a thin layer of polytetrafluoroethylene (Teflon) was inserted between the anode and the Alq[sub 3] layer. The effect of the Teflon layer thickness upon the device performance has also been investigated. A brightness of 16 000 cd/m² with 6 nm thick Teflon layer was achieved, whereas the conventional double-layer OLEDs with N,N'-bis-(1-naphthyl)-N,N'-diphenyl-l,1' biphenyl 4,4'-diamine and Alq[sub 3] showed only 9500 cd/m² in our experiments. The single-layer structure technology is of great importance to the OLED's commercialization due to its possible lower cost and higher production efficiency. And it is reasonable to infer that, based on this work, higher device performance could be realized by screening both the active material and the barrier layer material.


Related Articles

  • Tris-(8-hydroxyquinoline)aluminum-based organic light-emitting devices with Al/CaF[sub 2] cathode: Performance enhancement and interface electronic structures. Lee, J.; Park, Y.; Lee, S. K.; Cho, E.-J.; Kim, D. Y.; Chu, H. Y.; Lee, H.; Do, L.-M.; Zyung, T. // Applied Physics Letters;4/29/2002, Vol. 80 Issue 17, p3123 

    The device characteristics and the interface electronic structures of organic light-emitting devices based on tris-(8-hydroxyquinoline)aluminum were investigated with Al/CaF[sub 2], Al/LiF, and Al-only cathodes. Similar to the Al/LiF cathode, the Al/CaF[sub 2] cathode greatly improved the...

  • High-power light-emitting diodes operating in the 1.9 to 2.1-�m spectral range. Danilova, T. N.; Zhurtanov, B. E.; Zakgeim, A. L.; Il�inskaya, N. D.; Imenkov, A. N.; Saraev, O. N.; Sipovskaya, M. A.; Sherstnev, V. V.; Yakovlev, Yu. P. // Semiconductors;Feb99, Vol. 33 Issue 2, p206 

    Light-emitting diodes (LED's) operating in the spectral range 1.9-2.1 �m have been fabricated by liquid-phase epitaxy on the basis of AlGaAsSb/GaInAsSb double heterostructures with a high Al (64%) content in the wide-gap regions. The design of the LED makes it possible to locate the active...

  • Role of ultrathin Alq[sub 3] and LiF layers in conjugated polymer light-emitting diodes. Deng, X. Y.; Tong, S. W.; Hung, L. S.; Mo, Y. Q.; Cao, Y. // Applied Physics Letters;5/5/2003, Vol. 82 Issue 18, p3104 

    We report that an ultrathin layer of tris-(8-hydroxyquinoline) aluminum (Alq[sub 3]) interposed between a bilayer cathode of LiF/Al and an emissive layer can significantly improve electroluminescence efficiency in a polymer light-emitting device (PLED). At a current density of 35 mA/cm², a...

  • AlGaInP/mirror/Si light-emitting diodes with vertical electrodes by wafer bonding. Horng, R. H.; Huang, S. H.; Wuu, D. S.; Chiu, C. Y. // Applied Physics Letters;6/9/2003, Vol. 82 Issue 23, p4011 

    In a previous study, we reported a highly efficient AlGaInP light-emitting diode (LED) with a (Au/AuBe/SiO[SUB2]/Si mirror substrate (MS) fabricated by wafer bonding, where a planar electrode structure is used. In view of the more efficient epilayer area utilized, AlGaInP/mirror/barrier/Si LEDs...

  • Efficient green light-emitting diodes from a phenylated derivative of poly(p-phenylene–vinylene). Cacialli, F.; Friend, R. H.; Haylett, N.; Daik, R.; Feast, W. J.; dos Santos, D. A.; Bre´das, J. L. // Applied Physics Letters;12/16/1996, Vol. 69 Issue 25, p3794 

    We have used polyvinylcarbazole, PVK, in combination with poly(p-phenylene vinylene), PPV and a green-emitting, soluble derivative, poly(4,4′-diphenylene diphenylvinylene) or briefly PDPV, to fabricate triple-layer light-emitting diodes PPV/PVK/PDPV/metal, with indium tin oxide as the...

  • Intense visible light emission from Sr[sub 3]Al[sub 2]O[sub 6]:Eu,Dy. Akiyama, Morito; Xu, Chao-nan; Nonaka, Kazuhiro; Watanabe, Tadahiko // Applied Physics Letters;11/23/1998, Vol. 73 Issue 21 

    The triboluminescence intensity from stress-activated Sr[sub 3]Al[sub 2]O[sub 6]:Eu,Dy (SAO-ED) was so strong that we could see it with the naked eye in the atmosphere. The luminescence integrated intensity was about five hundred times as high as that of crystal sugar. We think that the light...

  • High efficiency, high modulation bandwidth (Ga,Al)As:Te,Zn light-emitting diodes with graded band gap. Leibenzeder, S.; Rühle, W.; Hoffmann, L.; Weyrich, C. // Applied Physics Letters;5/15/1985, Vol. 46 Issue 10, p978 

    A new (Ga,Al)As light-emitting diode (λmax =660–880 nm) is presented which has several advantages: simple processing, high external quantum efficiencies (up to 12%), and short decay times (down to 12 ns). The importance of photon recycling and reduced self-absorption in the graded band...

  • Novel substrates drive UV LEDs.  // Electronics Weekly;6/15/2011, Issue 2472, p4 

    The article reports that the company CrystAl-N is planning to launch aluminum nitride(AIN) substrates designed for ultraviolet lasers and light emitting diode (LED).

  • High performance AlGaInP visible light-emitting diodes. Kuo, C. P.; Fletcher, R. M.; Osentowski, T. D.; Lardizabal, M. C.; Craford, M. G.; Robbins, V. M. // Applied Physics Letters;12/31/1990, Vol. 57 Issue 27, p2937 

    The performance of surface-emitting visible AlGaInP light-emitting diodes (LEDs) is described. The devices have external quantum efficiencies greater than 2% and luminous efficiencies of 20 lm/A in the yellow (590 nm) spectral region. This performance is roughly ten times better than existing...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics