TITLE

Time-resolved electroluminescence of AlGaN-based light-emitting diodes with emission at 285 nm

AUTHOR(S)
Shatalov, M.; Chitnis, A.; Mandavilli, V.; Pachipulusu, R.; Zhang, J. P.; Adivarahan, V.; Wu, S.; Simin, G.; Khan, M. Asif; Tamulaitis, G.; Sereika, A.; Yilmaz, I.; Shur, M. S.; Gaska, R.
PUB. DATE
January 2003
SOURCE
Applied Physics Letters;1/13/2003, Vol. 82 Issue 2, p167
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We present a study on the time evolution of the electreluminescence (EL) spectra of AlGaN-based deep ultraviolet light-emitting diodes (LEDs) under pulsed current pumping. The EL spectra peaks at 285 nm and 330 nm are found to result from recombination involving band-to-band and free carriers to deep accepter level transitions. The 330 nm long-wavelength transitions to deep accepter levels in the p-AlGaN layer as well as the nenradiative processes significantly influence the LED internal quantum efficiency.
ACCESSION #
8858638

 

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