Synthesis and electronic structure of epitaxially stabilized Sr[sub 2-x]La[sub x]VO[sub 4] (0≤x≤1) thin films

Matsuno, J.; Okimoto, Y.; Kawasaki, M.; Tokura, Y.
January 2003
Applied Physics Letters;1/13/2003, Vol. 82 Issue 2, p194
Academic Journal
We have synthesized a-axis-oriented epitaxial thin films of layered vanadate Sr[sub 2-x]La[sub x]VO[sub 4] on LaSrAlO[sub 4] (100) substrates using a pulsed-laser deposition technique. Epitaxial interface energy stabilizes compounds from V[sup 4+] (x = 0) to V[sup 3+] (x = 1 ), for which none of bulk single crystal has been synthesized. The transport property including its anisotropy has been studied to reveal metallic conduction for x=0.15 and 0.2. The two-dimensional nature of the crystals gives insulating behavior along the c axis for all the compositions. Optical measurements indicate that the doped electrons are responsible for the insulator-to-metal transition as well as for the systematic variation of electronic structure from V[sup 4+] to V[sup 3+]-based Mott insulators.


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