The interface of epitaxial SrTiO[sub 3] on silicon: in situ and ex situ studies

Hu, Xiaoming; Li, H.; Liang, Y.; Wei, Y.; Yu, Z.; Marshall, D.; Edwards, J.; Droopad, R.; Zhang, X.; Demkov, A. A.; Moore, K.; Kulik, J.
January 2003
Applied Physics Letters;1/13/2003, Vol. 82 Issue 2, p203
Academic Journal
The formation of interfacial layers between silicon and the overgrown epitaxial SrTiO[sub 3] as a function of the growth temperature has been studied in detail using x-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. Models for the chemical compositions and atomic bonding states have been established. With a good understanding of the mechanisms of the interfacial layer formations, the molecular-beam epitaxy growth process can be well controlled to form high-quality, single-crystalline oxide films, as well as a desired interface between the grown oxide and silicon substrate. The epitaxial relationship has been found to be SrTiO[sub 3] (001) Si(001), and SrTiO[sub 3] 〈100〉Si〈ll0〉.


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