TITLE

Optimization of cubic GaN growth by metalorganic chemical vapor deposition based on residual strain relaxation

AUTHOR(S)
Feng, Z. H.; Yang, H.; Zheng, X. H.; Fu, Y.; Sun, Y. P.; Shen, X. M.; Wang, Y. T.
PUB. DATE
January 2003
SOURCE
Applied Physics Letters;1/13/2003, Vol. 82 Issue 2, p206
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The reduction of residual strain in cubic GaN growth by inserting a thermoannealing process is investigated. It is found that the epilayer with smaller tensile strain is subject to a wider optimal "growth window." Based on this process, we obtain the high-quality GaN film of pure cubic phase with the thickness of 4 µm by metalorganic chemical vapor deposition. The photoluminescence spectrum at room temperature shows the thick GaN layer has a near-band emission peak with a full width at half maximum of 42 meV which confirms its high crystal quality, further supported by the x-ray (002) diffraction measurement. A simplified model is demonstrated to interpret this strain effect on the growth process.
ACCESSION #
8858624

 

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