TITLE

Enhanced low temperature electrical activation of B in Si

AUTHOR(S)
Kalyanaraman, Ramki; Venezia, V. C.; Pelaz, L.; Haynes, T. E.; Gossmann, H.-J. L.; Rafferty, C. S.
PUB. DATE
January 2003
SOURCE
Applied Physics Letters;1/13/2003, Vol. 82 Issue 2, p215
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The electrical activation of B in n-type epitaxial-Si(100) has been enhanced in the temperature range of 400-800 °C. This enhanced activation was measured for 40 keV, 2 × 10[sup 14] cm[sup -2] dose of B implanted into a vacancy-rich Si region. The vacancy-rich region consists of excess vacancies (V[sup ex]) generated by a 2 MeV Si implant in the dose range of 3 × 10[sup 15]-10 × 10[sup 15] cm[sup -2]. The B activation in vacancy-rich Si is found to be a factor of ∼2.4 larger with up to -80% of the B activated as compared to similar B implant and activation anneals carried out in the bulk Si. The dependence of B activation on Vex concentration shows that the active B concentration increases with the Vex concentration. From this dependence it was estimated that at least three vacancies are required to activate an additional B atom. This process is distinctly different from the low temperature activation that occurs during solid-phase epitaxial recrystallization of B-doped amorphous Si as no amorphous Si is produced during any step. This low temperature processing will be advantageous in situations where the epitaxial recrystallization of a doped amorphous Si layer is not possible, for instance in the fabrication of fully depleted Si-on-insulator devices.
ACCESSION #
8858621

 

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