Enhanced low temperature electrical activation of B in Si

Kalyanaraman, Ramki; Venezia, V. C.; Pelaz, L.; Haynes, T. E.; Gossmann, H.-J. L.; Rafferty, C. S.
January 2003
Applied Physics Letters;1/13/2003, Vol. 82 Issue 2, p215
Academic Journal
The electrical activation of B in n-type epitaxial-Si(100) has been enhanced in the temperature range of 400-800 °C. This enhanced activation was measured for 40 keV, 2 × 10[sup 14] cm[sup -2] dose of B implanted into a vacancy-rich Si region. The vacancy-rich region consists of excess vacancies (V[sup ex]) generated by a 2 MeV Si implant in the dose range of 3 × 10[sup 15]-10 × 10[sup 15] cm[sup -2]. The B activation in vacancy-rich Si is found to be a factor of ∼2.4 larger with up to -80% of the B activated as compared to similar B implant and activation anneals carried out in the bulk Si. The dependence of B activation on Vex concentration shows that the active B concentration increases with the Vex concentration. From this dependence it was estimated that at least three vacancies are required to activate an additional B atom. This process is distinctly different from the low temperature activation that occurs during solid-phase epitaxial recrystallization of B-doped amorphous Si as no amorphous Si is produced during any step. This low temperature processing will be advantageous in situations where the epitaxial recrystallization of a doped amorphous Si layer is not possible, for instance in the fabrication of fully depleted Si-on-insulator devices.


Related Articles

  • New gettering using misfit dislocations in homoepitaxial wafers with heavily boron-doped silicon substrates. Kikuchi, H.; Kitakata, M.; Toyokawa, F.; Mikami, M. // Applied Physics Letters;1/30/1989, Vol. 54 Issue 5, p463 

    The gettering mechanism due to misfit dislocations in P/P+ epitaxial wafers is clarified for copper-diffused epitaxial wafers. The epilayer thickness of the sample is 2.2 μm and the substrate resistivity of the sample is 0.0015–0.002 Ω cm. It is dipped in a Cu(NO3 )2 -HF solution...

  • Temperature dependence of incorporation processes during heavy boron doping in silicon molecular beam epitaxy. Parry, C. P.; Kubiak, R. A.; Newstead, S. M.; Whall, T. E.; Parker, E. H. C. // Journal of Applied Physics;1/1/1992, Vol. 71 Issue 1, p118 

    Boron doped layers were grown by silicon molecular beam epitaxy to establish incorporation processes at temperatures between 900 and 450 °C. For temperatures exceeding 650 °C a surface accumulated phase of boron was formed when doping levels exceeded solid solubility limits. The properties...

  • Boron heavy doping for Si molecular beam epitaxy using a HBO2 source. Tatsumi, Toru; Hirayama, Hiroyuki; Aizaki, Naoaki // Applied Physics Letters;5/4/1987, Vol. 50 Issue 18, p1234 

    Boron doping with a high carrier concentration has been realized in Si molecular beam epitaxy (MBE) using a HBO2 source with the usual Knudsen cell. Maximum carrier concentration has reached 6×1020 cm-3 at crucible temperatures of 900 °C. From a comparison between activation energy for...

  • Origin and reduction of interfacial boron spikes in silicon molecular beam epitaxy. Iyer, S. S.; Delage, S. L.; Scilla, G. J. // Applied Physics Letters;2/8/1988, Vol. 52 Issue 6, p486 

    An interfacial boron spike is formed during the molecular beam epitaxial growth of Si. We show two possible sources for this unintentional spike. We have found that some boron contamination invariably occurs when silicon surfaces are exposed to air. A greater degree of contamination results when...

  • Boron redistribution in a shallow δ-doped Si structure after solid phase epitaxial growth. Huang, M. B.; Mitchell, I. V. // Applied Physics Letters;10/28/1996, Vol. 69 Issue 18, p2734 

    A combination of nuclear reaction analysis, high-resolution sectioning methods, and time-resolved reflectivity have been used to study the boron redistribution from a shallow δ-doped layer in silicon, following deep amorphization and subsequent solid phase epitaxial growth (SPEG). A...

  • Heavily boron-doped Si layers grown below 700 °C by molecular beam epitaxy using a HBO2 source. Lin, T. L.; Fathauer, R. W.; Grunthaner, P. J. // Applied Physics Letters;8/21/1989, Vol. 55 Issue 8, p795 

    Boron doping in Si layers grown by molecular beam epitaxy (MBE) at 500–700 °C using a HBO2 source has been studied. The maximum boron concentration without detectable oxygen incorporation for a given substrate temperature and Si growth rate has been determined using secondary-ion mass...

  • Influence of boron on radiation enhanced diffusion of antimony in delta-doped silicon. Le´ve⁁que, P.; Christensen, J. S.; Kuznetsov, A. Yu.; Svensson, B. G.; Larsen, A. Nylandsted // Journal of Applied Physics;4/1/2002, Vol. 91 Issue 7, p4073 

    The silicon samples used in this work contain a sequence of alternating boron and antimony spikes grown by molecular beam epitaxy. These samples were irradiated with 2.5 MeV protons at elevated temperatures ranging from 580 °C to 830 °C and characterized by secondary-ion mass spectrometry....

  • Effects of an epitaxial CoSi...layer on diffusion of B and Sb in Si during annealing and oxidation. Tyagi, A.K.; Kappius, L. // Journal of Applied Physics;6/1/1999, Vol. 85 Issue 11, p7639 

    Investigates the diffusion of boron and antimony in silicon, with and without epitaxial CoSi...layer. Influence of the local oxidation of silicide (LOCOSI) process; Information on the diffusion coefficients in silicon; Effect of a CoSi...film on point defects.

  • B-doped Si(001) grown by gas-source molecular-beam epitaxy from Si2H6 and B2H6:B incorporation and electrical properties. Lu, Q.; Bramblett, T. R.; Lee, N.-E.; Hasan, M.-A.; Karasawa, T.; Greene, J. E. // Journal of Applied Physics;4/1/1995, Vol. 77 Issue 7, p3067 

    Deals with a study which grew boron-doped silicon films on silicon substrates by gas-source molecular beam epitaxy (GS-MBE) using Si[sub2]H[sub6] and B[sub2]H[sub6]. Background on GS-MBE; Experimental procedure; Experimental results; Discussion.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics