Interface properties of thermally oxidized n-GaN metal–oxide–semiconductor capacitors

Nakano, Yoshitaka; Jimbo, Takashi
January 2003
Applied Physics Letters;1/13/2003, Vol. 82 Issue 2, p218
Academic Journal
We report on the interface properties of thermally oxidized n-GaN metal-oxide-semiconductor capacitors fabricated on sapphire substrates. 100-nm-thick β-Ga[sub 2]O[sub 3] was grown by dry oxidation at 880 —C for 5 h. From secondary ion mass spectrometry measurements, an intermediate Ga oxynitride layer with graded compositions is clearly observed at the β-Ga[sub 2]O[sub 3]/GaN interface. Capacitance-voltage measurements show a deep depletion feature and a low interface state density of ∼5.5 × 10[sup 10] eV[sup -1] cm[sup -2]. Additionally, no discrete interface traps can be detected by deep-level transient spectroscopic measurements. These results indicate that the surface Fermi level is unpinned at the β-Ga[sub 2]O[sub 3]/GaN interface, which may be associated with the presence of the interfacial Ga oxynitride layer.


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