Proposal for all-electrical measurement of T[sub 1] in semiconductors

Žutic, Igor; Fabian, Jaroslav; Sarma, S. Das
January 2003
Applied Physics Letters;1/13/2003, Vol. 82 Issue 2, p221
Academic Journal
In an inhomogeneously-doped magnetic semiconductor, spin relaxation time T[sub 1] can be determined by all-electrical measurements. Nonequilibrium spin injected in a magnetic p-n junction gives rise to the spin-voltaic effect, in which the nonequilibrium spin-induced charge current is very sensitive to T[sub 1] and can flow even at no applied bias. It is proposed that T[sub 1] can be determined by measuring the I-V characteristics in such a geometry. In a magnetic p-n junction, for which the results can be calculated analytically, it is also possible to extract the g-factor and the degree of injected-carrier spin polarization.


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