TITLE

Proposal for all-electrical measurement of T[sub 1] in semiconductors

AUTHOR(S)
Žutic, Igor; Fabian, Jaroslav; Sarma, S. Das
PUB. DATE
January 2003
SOURCE
Applied Physics Letters;1/13/2003, Vol. 82 Issue 2, p221
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In an inhomogeneously-doped magnetic semiconductor, spin relaxation time T[sub 1] can be determined by all-electrical measurements. Nonequilibrium spin injected in a magnetic p-n junction gives rise to the spin-voltaic effect, in which the nonequilibrium spin-induced charge current is very sensitive to T[sub 1] and can flow even at no applied bias. It is proposed that T[sub 1] can be determined by measuring the I-V characteristics in such a geometry. In a magnetic p-n junction, for which the results can be calculated analytically, it is also possible to extract the g-factor and the degree of injected-carrier spin polarization.
ACCESSION #
8858619

 

Related Articles

  • Resistance peak and giant magnetoresistance of degenerate ferromagnetic semiconductors with arbitrary spin polarization. Nagaev, �. L. // Physics of the Solid State;Sep97, Vol. 39 Issue 9, p1415 

    The temperature peak of the resistance and the giant magnetoresistance of degenerate ferromagnetic semiconductors with an arbitrary degree of electron spin polarization are investigated. The spin-wave and paramagnetic domains are considered. The calculations are based on the notion of the...

  • Current and spin-filtering dual diodes based on diluted magnetic semiconductor heterostructures with a nonmagnetic barrier. Feng Zhai, F.; Yong Guo; Bing-lin Gu, F. // Journal of Applied Physics;10/15/2003, Vol. 94 Issue 8, p5432 

    We have investigated the ballistic spin-polarized transport through a diluted magnetic semiconductor heterostructure with the inclusion of a nonmagnetic barrier. It is found that at suitable magnetic fields, the output current of the system exhibits a nearly 100% spin polarization and large...

  • Spin relaxation of excitons in nonmagnetic quantum dots: Effect of spin coupling to magnetic semiconductor quantum dots. Lee, S.; Dobrowolska, M.; Furdyna, J. K. // Journal of Applied Physics;4/15/2006, Vol. 99 Issue 8, p08F702 

    The effect of spin coupling on the spin polarization of exciton was investigated in double quantum dot (QD) structures, one layer consisting of self-assembled nonmagnetic CdZnSe quantum QDs, and the other of CdMnSe diluted magnetic semiconductor QDs, both layers embedded in ZnSe. The...

  • Sign reversal and light controlled tuning of circular polarization in semimagnetic CdMnSe quantum dots. Schmidt, T.; Scheibner, M.; Worschech, L.; Forchel, A.; Slobodskyy, T.; Molenkamp, L. W. // Journal of Applied Physics;12/15/2006, Vol. 100 Issue 12, p123109 

    Circularly polarized luminescence of CdMnSe quantum dots in magnetic fields up to 5 T is studied for nominal Mn concentrations of 0%, 1%, and 2% by using a photoelastic modulator technique. The exciton g factors as well as spin relaxation times were determined from the polarized luminescence...

  • Excitation Power Control of Circular Polarization of Magneto-Photoluminescence from InSb/InAs Quantum Dots. Terent'ev, Ya. V.; Mukhin, M. S.; Toropov, A. A.; Meltser, B. Ya; Semenov, A. N.; Ivanov, S. V. // AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p667 

    Circular-polarized magneto-photoluminescence of InSb/InAs type-II quantum dots has been investigated at a magnetic field applied in the Faraday geometry in the wide range of the excitation intensity. It was observed that under condition of the low excitation (∼1 mW in a spot of 1 mm...

  • Resonant tunneling magnetoresistance in coupled quantum wells. Ertler, Christian; Fabian, Jaroslav // Applied Physics Letters;12/11/2006, Vol. 89 Issue 24, p242101 

    A three barrier resonant tunneling structure in which the two quantum wells are formed by a magnetic semiconductor is theoretically investigated. Self-consistent numerical simulations of the structure predict giant magnetocurrent in the resonant bias regime as well as significant current spin...

  • Spin-polarization dynamics in InGaAs quantum dots during pulsed electrical spin-injection. Asshoff, Pablo; Löffler, Wolfgang; Zimmer, Jochen; Füser, Heiko; Flügge, Harald; Kalt, Heinz; Hetterich, Michael // Applied Physics Letters;11/16/2009, Vol. 95 Issue 20, p202105 

    We investigate the fidelity of electron spin initialization in quantum dots utilizing nanosecond-pulsed electrical spin injection through a semimagnetic spin aligner in a spin light-emitting diode. At the onset of the electroluminescence signal, the circular polarization degree of the emitted...

  • Photoinduced spin alignment of the magnetic ions in (Ga,Mn)As. Sun, Baoquan; Jiang, Desheng; Sun, Zheng; Ruan, Xuezhong; Deng, Jiajun; Zhao, Jianhua; Ji, Yang; Xu, Zhongying // Journal of Applied Physics;10/15/2006, Vol. 100 Issue 8, p083104 

    Time-resolved Kerr rotation measurement in the (Ga,Mn)As diluted magnetic semiconductor allows direct observation of the dynamical properties of the spin system of the magnetic ions and the spin-polarized holes. Experimental results show that the magnetic ions can be aligned by the polarized...

  • Spin polarization of helium 2[sup 3]S[sub 1] atoms in a Na�He gas-discharge plasma with optically oriented sodium atoms. Dmitriev, S. P.; Denisov, D. �. // Technical Physics;Jun97, Vol. 42 Issue 6, p704 

    The polarization of helium 2�S[sub 1] atoms is achieved by collisional processes involving optically oriented sodium atoms in a Na-He gas-discharge plasma, and the conditions for observing the signal of the magnetic resonance excited by the 2�S[sub 1] state of the He atoms are...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics