TITLE

Influence of polarization charges in Al[sub 0.4]Ga[sub 0.6]N/GaN barrier varactors

AUTHOR(S)
Saglam, M.; Mutamba, K.; Megej, A.; Sydlo, C.; Hartnagel, H. L.; Daumiller, I.
PUB. DATE
January 2003
SOURCE
Applied Physics Letters;1/13/2003, Vol. 82 Issue 2, p227
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In this letter, we investigate the influence of polarization charges on the characteristics of metalorganic chemical-vapor-deposition-grown A1[sub 0.4]Ga[sub 0.6]N/GaN heterostructure barrier varactors (HBVs). The current-voltage and capacitance-voltage characteristics of the AlGaN/GaN HBVs shift asymmetrically due to the combination of piezoelectric (stress-induced) and spontaneous polarization effects in the barriers. Depending on the polarization of the bias voltage, different values of capacitance modulation, 1.4 for negative bias and 1.1 for positive bias, are observed. The obtained measurement results are supported by a theoretical analysis involving polarization charges at layer interfaces as well as their effect on the barrier height and the width of the depletion region.
ACCESSION #
8858617

 

Related Articles

  • Polarization-Dependent Inhomogeneous Broadening of the Edge Luminescence Band of Hexagonal Gallium Nitride. Kompan, M. E.; Shabanov, I. Yu.; Zhilyaev, Yu. V. // Physics of the Solid State;Jun2000, Vol. 42 Issue 6, p1041 

    A correlation of the shape of the edge luminescence band for hexagonal gallium nitride and the polarization of exciting light is revealed. The effect is explained by the existence of microregions with different directions of deformation in the plane perpendicular to the sixfold axis. � 2000...

  • Aluminum and GaN contacts on Si(111) and sapphire. Zhao, Z. M.; Zhao, Z.M.; Jiang, R. L.; Jiang, R.L.; Chen, P.; Li, W. P.; Li, W.P.; Xi, D. J.; Xi, J.; Xie, S. Y.; Xie, S.Y.; Shen, B.; Zhang, R.; Zheng, Y. D.; Zheng, Y.D. // Applied Physics Letters;11/13/2000, Vol. 77 Issue 20 

    Al and GaN contacts on both Si(111) and sapphire substrates were studied in this letter. After annealing at 450, 520, 600, and 650 °C for 35 min under a N[sub 2] flowing ambient, the current-voltage characteristics of Al/GaN contacts on Si(111) substrates were different from those on sapphire...

  • A thermodynamic model and estimation of the experimental value of spontaneous polarization in a wurtzite GaN. W. S. Yan; R. Zhang; Z. L. Xie; X. Q. Xiu; P. Han; H. Lu; P. Chen; S. L. Gu; Y. Shi; Y. D. Zheng; Z. G. Liu // Applied Physics Letters;1/26/2009, Vol. 94 Issue 4, pN.PAG 

    Determining the spontaneous polarization is a fundamental problem in the III-nitride field. However the experimental value of the spontaneous polarization has not yet been reported. In this study, a thermodynamic model is proposed to investigate the spontaneous polarization of GaN from the GaN...

  • Phenomenological model for the spontaneous polarization of GaN. Yan, W. S.; Zhang, R.; Xiu, X. Q.; Xie, Z. L.; Han, P.; Jiang, R. L.; Gu, S. L.; Shi, Y.; Zheng, Y. D. // Applied Physics Letters;4/30/2007, Vol. 90 Issue 18, p182113 

    A phenomenological model is presented to determine the experimental value of the spontaneous polarization of GaN. The expression of the spontaneous polarization at room temperature is obtained. The electrostrictive coefficient M33 of a wurtzite GaN film is used to evaluate the experimental value...

  • Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures. Della Sala, Fabio; Di Carlo, Aldo; Lugli, Paolo; Bernardini, Fabio; Fiorentini, Vincenzo; Scholz, Reinhard; Jancu, Jean-Marc // Applied Physics Letters;4/5/1999, Vol. 74 Issue 14, p2002 

    Investigates the free-carrier screening of macroscopic polarization fields in wurtzite gallium nitride (GaN)/indium gallium nitride (InGaN) quantum well lasers. Use of self-consistent tight-binding approach; High carrier concentrations found experimentally in nitride lasers.

  • GaN/W/W-oxide metal base transistor with very large current gain and power gain. Mochizuki, K.; Uesugi, K.; Asbeck, P. M.; Asbeck, P.M.; Gotoh, J.; Mishima, T.; Hirata, K.; Oda, H. // Applied Physics Letters;7/31/2000, Vol. 77 Issue 5 

    We demonstrate a GaN/W/W-oxide metal base transistor (MBT) whose collector is formed by oxidizing the intrinsic W base. The thickness of the nonoxidized intrinsic base of the fabricated collector-up MBT on a sapphire substrate was estimated to be 2-3 nm. Although the MBT showed large leakage,...

  • Effects of growth conditions on the incorporation of oxygen in AlGaN layers grown by plasma assisted molecular beam epitaxy. Elsass, C. R.; Elsass, C.R.; Mates, T.; Heying, B.; Poblenz, C.; Fini, P.; Petroff, P. M.; Petroff, P.M.; DenBaars, S. P.; DenBaars, S.P.; Speck, J. S.; Speck, J.S. // Applied Physics Letters;11/13/2000, Vol. 77 Issue 20 

    Using secondary ion mass spectroscopy we have shown that oxygen incorporation in AlGaN films is dependent upon the III/V growth conditions and the growth temperature of the films. AlGaN films grown under excess group III conditions (Ga-rich) exhibited step flow growth and at least a factor of 3...

  • Electrical characteristics of proton-irradiated Sc[sub 2]O[sub 3] passivated AlGaN/GaN high electron mobility transistors. Luo, B.; Kim, Jihyun; Ren, F.; Gillespie, J. K.; Fitch, R. C.; Sewell, J.; Dettmer, R.; Via, G. D.; Crespo, A.; Jenkins, T. J.; Gila, B. P.; Onstine, A. H.; Allums, K. K.; Abernathy, C. R.; Pearton, S. J.; Dwivedi, R.; Fogarty, T. N.; Wilkins, R. // Applied Physics Letters;3/3/2003, Vol. 82 Issue 9, p1428 

    Sc[sub 2]O[sub 3]-passivated AlGaN/GaN high electron mobility transistors (HEMTs) were irradiated with 40 MeV protons to a fluence corresponding to approximately 10 years in low-earth orbit (5 × 10[sup 9] cm[sup -2]). Devices with an AlGaN cap layer showed less degradation in dc...

  • Accumulation hole layer in p-GaN/AlGaN heterostructures. Shur, M. S.; Shur, M.S.; Bykhovski, A. D.; Bykhovski, A.D.; Gaska, R.; Yang, J. W.; Yang, J.W.; Simin, G.; Khan, M. A.; Khan, M.A. // Applied Physics Letters;5/22/2000, Vol. 76 Issue 21 

    We present the results on piezoelectric and pyroelectric doping in AlGaN-on-GaN and GaN-on-AlGaN heterostructures and demonstrate p-GaN/AlGaN structures with accumulation hole layer. Our results indicate that polarization charge can induce up to 5x10[sup 13] cm[sup -2] holes at the AlGaN/GaN...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics