TITLE

Nearly total spin polarization in La[sub 2/3]Sr[sub 1/3]MnO[sub 3] from tunneling experiments

AUTHOR(S)
Bowen, M.; Bibes, M.; Barthélémy, A.; Contour, J.-P.; Anane, A.; Lemaı⁁tre, Y.; Fert, A.
PUB. DATE
January 2003
SOURCE
Applied Physics Letters;1/13/2003, Vol. 82 Issue 2, p233
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have performed magnetotransport measurements on La[sub 2/3]Sr[sub 1/3]MnO[sub 3]/SrTiO[sub 3]/La[sub 2/3]Sr[sub 1/3]MnO[sub 3] magnetic tunnel junctions. A magnetoresistance ratio of more than 1800% is obtained at 4 K, from which we infer an electrode spin polarization of at least 95%. This result strongly underscores the half-metallic nature of mixed-valence manganites and demonstrates their capability as a spin analyzer. The magnetoresistance extends up to temperatures of more than 270 K. We argue that these improvements over most previous works may result from optimizing the patterning process for oxide heterostructures.
ACCESSION #
8858615

 

Related Articles

  • Improved step edges on LaAlO[sub 3] substrates by using amorphous carbon etch masks. Yi, H.R.; Ivanov, Z.G. // Applied Physics Letters;8/29/1994, Vol. 65 Issue 9, p1177 

    Describes a technique for the fabrication of sharp and straight step edges on LaAlO[sub 3] substrates by ion milling. Definition of amorphous carbon films; Determination of the step profile; Fabrication of YBa[sub 2]Cu[sub 3]O[sub 7] step edge junctions; Observation of weak links in step edge...

  • The possibility of a very large magnetoresistance in half-metallic oxide systems. Bratkovsky, A. M. // JETP Letters;3/10/97, Vol. 65 Issue 5, p452 

    The tunnel magnetoresistance (TMR) is analyzed for ferromagnet�insulator�ferromagnet junctions, including novel half-metallic systems with 100% spin polarization. Direct tunneling is compared with the impurity-assisted and resonant TMR. Direct tunneling in iron-group systems leads to...

  • High field sensitivity at room temperature in p-n junction based bilayered manganite devices. Vachhani, P. S.; Markna, J. H.; Kuberkar, D. G.; Choudhary, R. J.; Phase, D. M. // Applied Physics Letters;1/28/2008, Vol. 92 Issue 4, p043506 

    The thickness dependent current-voltage (I-V) properties of the bilayered La0.6Pr0.2Sr0.2MnO3 (LPSMO)/Nb-SrTiO3 (SNTO) p-n junction devices having two different thicknesses, grown using pulsed laser deposition (PLD) technique, have been studied. The I-V curves of these bilayered junctions show...

  • Spin-polarized Tunneling Spectroscopy of YBCO/LSMO Tunnel Junction. Kashiwaya, Hiromi; Ikeda, Kaori; Prijamboedi, Bambang; Kashiwaya, Satoshi; Sugimoto, Akira; Kurosawa, Itaru; Tanaka, Yukio // AIP Conference Proceedings;2006, Vol. 850 Issue 1, p879 

    The Zeeman magnetic field responses of eptaxially grown YBa2Cu3O7-δ/La0.67Sr0.33MnO3 (YBCO/LSMO) tunnel junction are studied for various doping rates of YBCO. We have fabricated underdoped, optimally doped, and overdoped edge junctions, and the magnetic field is applied along the junction...

  • Concurrent nonvolatile resistance and capacitance switching in LaAlO3. Wu, S. X.; Peng, H. Y.; Wu, T. // Applied Physics Letters;2/28/2011, Vol. 98 Issue 9, p093503 

    We report on the correlated nonvolatile resistance and capacitance switching in Pt/LaAlO3/Nb:SrTiO3 heterostructures. The pristine devices show the typical characteristics of a Schottky junction; however, after forming, a reverse bias switches the device into a low resistance and high...

  • Conducting interfaces between band insulating oxides: The LaGaO3/SrTiO3 heterostructure. Perna, P.; Maccariello, D.; Radovic, M.; Scotti di Uccio, U.; Pallecchi, I.; Codda, M.; Marré, D.; Cantoni, C.; Gazquez, J.; Varela, M.; Pennycook, S. J.; Granozio, F. Miletto // Applied Physics Letters;10/11/2010, Vol. 97 Issue 15, p152111 

    We show that the growth of the heterostructure LaGaO3/SrTiO3 yields the formation of a highly conductive interface. Our samples were carefully analyzed by high resolution electron microscopy, in order to assess their crystal perfection and to evaluate the abruptness of the interface. Their...

  • Spin polarization of helium 2[sup 3]S[sub 1] atoms in a Na�He gas-discharge plasma with optically oriented sodium atoms. Dmitriev, S. P.; Denisov, D. �. // Technical Physics;Jun97, Vol. 42 Issue 6, p704 

    The polarization of helium 2�S[sub 1] atoms is achieved by collisional processes involving optically oriented sodium atoms in a Na-He gas-discharge plasma, and the conditions for observing the signal of the magnetic resonance excited by the 2�S[sub 1] state of the He atoms are...

  • The Contributions of Polarizabilities to Four Basis Polarizations of Electromagnetic Media. Bukina, E. N.; Dubovik, V. M. // Technical Physics;Feb2001, Vol. 46 Issue 2, p133 

    The contributions to four basis densities of polarization distribution for an arbitrary electromagnetic medium are determined. Mixed polarizabilities given by tensors of up to the fourth rank are considered. Specific physical examples are discussed.

  • Structural Features and Energy of Small Water Clusters. Drozdov, S. V.; Vostrikov, A. A. // Technical Physics Letters;Jun2000, Vol. 26 Issue 6, p493 

    Collisions between water clusters (H[sub 2]O)[sub n], n = 27, with relative velocities V = 1, 3, or 10 km/s and various initial temperatures, were studied by the molecular dynamics method within the framework of a polarization model. It was found that the clusters may either stick together (at V...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics