Thermal stability of Ti-catalyzed Si nanowires

Kamins, T. I.; Li, X.; Williams, R. Stanley
January 2003
Applied Physics Letters;1/13/2003, Vol. 82 Issue 2, p263
Academic Journal
The stability of long, narrow Si nanowires grown by catalytic decomposition of a Si-containing gas during annealing was investigated because their use in devices will depend on their stability during subsequent processing. The nanowires can be annealed without visible change well above 900 °C in N[sub 2] after air exposure. However, annealing in a H[sub 2] ambient more readily degrades their structure. Nanowires without a native surface oxide are stable up to 850°C, but change significantly at 900 °C. Surface diffusion appears to be sufficient to allow constant-diameter nanowire regions to form.


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