TITLE

AlN/diamond heterojunction diodes

AUTHOR(S)
Miskys, C. R.; Garrido, J. A.; Nebel, C. E.; Hermann, M.; Ambacher, O.; Eickhoff, M.; Stutzmann, M.
PUB. DATE
January 2003
SOURCE
Applied Physics Letters;1/13/2003, Vol. 82 Issue 2, p290
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
An aluminum nitride/diamond p-n heterojunction has been realized by plasma-induced molecular-beam epitaxy growth of AlN on (100) diamond. The epitaxial nature of this heterojunction has been confirmed by high-resolution x-ray diffraction. The silicon-doped AlN film (n-type) on the natural boron-doped (p-type) diamond substrate formed a heterobipolar diode with good rectifying properties and surprisingly efficient light emission in the spectral range from 2.7 to 4.8 eV under forward bias. Results concerning the structural, electrical, and optical characterization of the AlN/diamond heterojunction are reported in this letter.
ACCESSION #
8858595

 

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