TITLE

Damage coefficient in high-temperature particle- and γ-irradiated silicon p–i–n diodes

AUTHOR(S)
Ohyama, H.; Takakura, K.; Hayama, K.; Kuboyama, Satoshi; Deguchi, Yasushi; Matsuda, Sumio; Simoen, E.; Claeys, C.
PUB. DATE
January 2003
SOURCE
Applied Physics Letters;1/13/2003, Vol. 82 Issue 2, p296
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The impact of high-temperature neutron, electron, and γ-irradiations on the dark current of silicon p-i-n junctions is described in terms of a damage coefficient K[sub I]. It is shown that this K[sub I] is thermally activated and reduces for increasing irradiation temperature. The same activation energy is retrieved when studying the isochronal annealing behavior of a set of room-temperature irradiated diodes. This leads to a simple method to predict the high-temperature K[sub I] from only room-temperature irradiations combined with a thermal annealing study.
ACCESSION #
8858593

 

Related Articles

  • Measurement of mobility-lifetime product in hydrogenated amorphous silicon p-i-n type diodes. Könenkamp, R.; Hermann, A. M.; Madan, A. // Applied Physics Letters;2/15/1985, Vol. 46 Issue 4, p405 

    We have applied the junction recovery technique to different configurations of hydrogenated amorphous silicon type diodes and show that the recovered charge consists predominantly of holes. The technique is used for the measurement of the mobility-lifetime product for recombination, which was...

  • Defects in planar Si pn junctions studied with electrically detected magnetic resonance. Wimbauer, T.; Ito, K.; Mochizuki, Y.; Horikawa, M.; Kitano, T.; Brandt, M. S.; Brandt, M.S.; Stutzmann, M. // Applied Physics Letters;4/17/2000, Vol. 76 Issue 16 

    We report electrically detected magnetic resonance (EDMR) measurements on planar Si pn junctions which were isolated via local oxidation of silicon (LOCOS). The investigations of the as-fabricated diodes show the presence of various defects. We observe P[sub b] centers at the boundary to the...

  • Electrical characterization and modeling of wide-band-gap porous silicon p-n diodes. Chen, Zhiliang; Lee, Tzung-Yin; Bosman, Gijs // Journal of Applied Physics;8/15/1994, Vol. 76 Issue 4, p2499 

    Deals with a study which detailed the measurement of the current through porous silicon p-n junctions as a function of bias voltage and temperature. Indication of the ideality factor m=4 value observed under forward bias; Factors that dominate the measured diode current; Source of porous silicon.

  • Electrical characteristics of epitaxial pn junction diodes fabricated on germanium-boron-doped silicon. Ang, S. S. // Journal of Applied Physics;7/15/1995, Vol. 78 Issue 2, p1322 

    Presents a study which investigated the electrical characteristics of epitaxial pn junction diodes fabricated on germanium-boron (Ge/B)-doped silicon. Description of the typical diode quality factors of the diodes; Explanation for the lower current densities of diodes fabricated on silicon...

  • Protective coating on the p-n junction of In0.53Ga0.47As/InP p-i-n planar diodes by vacuum-evaporated glass. Ota, Yusuke; Hu, Patrick H-S.; Seabury, Charles W.; Brown, Michael G. // Journal of Applied Physics;1/1/1987, Vol. 61 Issue 1, p404 

    Describes a technique for protecting the p-n junction of indium gallium arsenide planar diodes using thermally evaporated glass films. Fabrication of the diodes; Deposition of silicon nitride layer and its effects on the diode characteristic; Information on the protective coating of the p-n...

  • Excitation of a microdischarge with a reverse-biased pn junction. Wagner, C. J.; Park, S.-J.; Eden, J. G. // Applied Physics Letters;2/5/2001, Vol. 78 Issue 6, p709 

    Excitation of cylindrical microdischarges, 300-360 μm in diameter, by a reverse-biased, Si pn junction has been demonstrated. Devices fabricated from commercial diodes have been operated with Ne gas pressures in the 200-700 Torr range and dc voltages as low as 120 V. For a Ne gas pressure of...

  • Kinetics of Breakdown Electroluminescence in Silicon Carbide p—n Structures. Genkin, A. M.; Genkina, V. K.; Germash, L. P. // Technical Physics;Apr2000, Vol. 45 Issue 4, p432 

    Using a single photon statistics method providing time resolution of 0.25 ns, the effect on the breakdown electroluminescence kinetics in light-emitting diodes based on silicon carbide of particular features of the p–n junction structure was studied. Conditions were identified under which...

  • p-n junction peripheral current analysis using gated diode measurements. Czerwinski, A.; Simoen, E.; Claeys, C. // Applied Physics Letters;6/29/1998, Vol. 72 Issue 26 

    A modified method for analysis of the current–voltage characteristics of a gated diode structure is proposed and validated in order to investigate the peripheral reverse current in a silicon p-n junction diode. The peripheral generation current in modern p-n diodes is attributed fully to...

  • Recombination-enhanced defect motion in forward-biased 4H–SiC p-n diodes. Skowronski, M.; Liu, J. Q.; Vetter, W. M.; Dudley, M.; Hallin, C.; Lendenmann, H. // Journal of Applied Physics;10/15/2002, Vol. 92 Issue 8, p4699 

    The generation and evolution of defects in 4H-SiC p-n junctions due to carrier injection under forward bias have been investigated by synchrotron white beam x-ray topography, electroluminescence imaging, and KOH etching. The defects are Shockley stacking faults with rhombic or triangular shapes...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics