Damage coefficient in high-temperature particle- and γ-irradiated silicon p–i–n diodes

Ohyama, H.; Takakura, K.; Hayama, K.; Kuboyama, Satoshi; Deguchi, Yasushi; Matsuda, Sumio; Simoen, E.; Claeys, C.
January 2003
Applied Physics Letters;1/13/2003, Vol. 82 Issue 2, p296
Academic Journal
The impact of high-temperature neutron, electron, and γ-irradiations on the dark current of silicon p-i-n junctions is described in terms of a damage coefficient K[sub I]. It is shown that this K[sub I] is thermally activated and reduces for increasing irradiation temperature. The same activation energy is retrieved when studying the isochronal annealing behavior of a set of room-temperature irradiated diodes. This leads to a simple method to predict the high-temperature K[sub I] from only room-temperature irradiations combined with a thermal annealing study.


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