TITLE

An apparatus for pulse chemical vapor deposition of layers

AUTHOR(S)
Shevtsov, Yu.; Kuchumov, B.; Semenov, A.; Igumenov, I.
PUB. DATE
May 2013
SOURCE
Instruments & Experimental Techniques;May2013, Vol. 56 Issue 3, p353
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
An apparatus for chemical deposition of layers of different materials with pulsed automated dosing of a hot gas phase of volatile metal-organic compounds (precursors) admitted into a reaction chamber is described. The apparatus has three channels for dosing the gas precursor phase and three channels for dosing reacting gases. As an example, a technique for depositing HfO films on a (100)Si substrate is presented, and the deposited films are analyzed. It is shown, that this apparatus can be used to deposit layers on complex 3D systems with a large aspect ratio using an example of the deposition of HfO layers on the inner surfaces of channels of a microchannel plate.
ACCESSION #
88060362

 

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