Catalyst-free growth of amorphous silicon nanowires by laser ablation

Kokai, F.; Inoue, S.; Hidaka, H.; Uchiyama, K.; Takahashi, Y.; Koshio, A.
July 2013
Applied Physics A: Materials Science & Processing;Jul2013, Vol. 112 Issue 1, p1
Academic Journal
Amorphous silicon nanowires (NWs), 3-50 nm thick and up to 4 μm long, were grown by room-temperature continuous wave laser ablation of Si in high-pressure (0.1-0.9 MPa) Ar gas without the addition of any catalysts. The diameter and length of the NWs increased as the pressures of the ambient Ar increased. Sphere-like Si particles with diameters of 4-110 nm were observed at the tips of grown NWs and their diameters exhibited a strong correlation with the NW diameters. We propose a stress-driven self-catalytic vapor-liquid-solid mechanism to explain the growth of the NWs.


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