High-gain wavelength-stabilized 1.55 μm InAs/InP(100) based lasers with reduced number of quantum dot active layers

Sichkovskyi, V. I.; Waniczek, M.; Reithmaier, J. P.
June 2013
Applied Physics Letters;6/3/2013, Vol. 102 Issue 22, p221117
Academic Journal
The effect of the number of InAs/InP quantum dot layers (QDLs) on the static parameters of 1.55 μm emitting lasers was studied in the range of 1-3 QDLs. Due to the high modal gain of Γg0 ≥ 15.5 cm-1 per QDL ground state lasing of lasers with only a single QDL could be achieved with 11 mW total output power. By optimizing the QDLs number and the cavity length, the temperature dependence of the emission wavelength can be intrinsically stabilized resulting in an ultra-low emission wavelength shift of 0.078 nm/K for a 590 μm long laser with 2 QDLs.


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