TITLE

Unit cell orientation of tetragonal-like BiFeO3 thin films grown on highly miscut LaAlO3 substrates

AUTHOR(S)
Beekman, C.; Siemons, W.; Ward, T. Z.; Budai, J. D.; Tischler, J. Z.; Xu, R.; Liu, W.; Balke, N.; Nam, J. H.; Christen, H. M.
PUB. DATE
June 2013
SOURCE
Applied Physics Letters;6/3/2013, Vol. 102 Issue 22, p221910
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Synchrotron and lab-scale x-ray diffraction shows that tetragonal-like T′-BiFeO3 films on miscut LaAlO3 substrates (α < 5°) exhibit (00l)-planes tilted away from those of the substrate as predicted by the 'Nagai model' (except for miscut < 0.2°). Tilts as large as 1° are achieved even in 100 nm thick films, strikingly larger than those observed in other perovskites. We attribute this to the large c/a ratio and the high crystalline coherency of the T′-BiFeO3/LaAlO3 interface. This coherency is possible through an observed 'diagonal-on-diagonal' film/substrate alignment. Interestingly, the substrate miscut does not influence the relative population of monoclinic domains.
ACCESSION #
88041297

 

Related Articles

  • A high-throughput approach for cross-sectional transmission electron microscopy sample preparation of thin films. Bo Yao; Kevin R. Coffey // Journal of Electron Microscopy;Dec2008, Vol. 57 Issue 6, p189 

    Cross-sectional transmission electron microscopy (XTEM) is a very useful technique to study the interfacial diffusion and reactions and the grain growth of thin films. However, the preparation of XTEM samples of thin films is tedious and challenging. Difficulties may include the delamination of...

  • Controllers Guard Against Arc Faults.  // Power Electronics Technology;Nov2004, Vol. 30 Issue 11, p36 

    Reports that solid-state power controllers detect arc faults without nuisance tripping. Protection of aircraft wiring systems against overheating due to excessive currents; Prevention of damage from heating; Ability of arcing conditions to damage or destroy wiring but do not trip standard...

  • Structural and optical properties of nonpolar GaN thin films. Wu, Z. H.; Fischer, A. M.; Ponce, F. A.; Bastek, B.; Christen, J.; Wernicke, T.; Weyers, M.; Kneissl, M. // Applied Physics Letters;4/28/2008, Vol. 92 Issue 17, p171904 

    A correlation between the structural and optical properties of GaN thin films grown in the [formula] direction has been established using transmission electron microscopy and cathodoluminescence spectroscopy. The GaN films were grown on an r-plane sapphire substrate, and epitaxial lateral...

  • Volatile and nonvolatile magnetic easy-axis rotation in epitaxial ferromagnetic thin films on ferroelectric single crystal substrates. Wang, Z.; Wang, Y.; Ge, W.; Li, J.; Viehland, D. // Applied Physics Letters;9/23/2013, Vol. 103 Issue 13, p132909 

    We explored the relationship between phase transformation and magnetoelectric effect by depositing epitaxial CoFe2O4 films on <110> oriented Pb(Mg,Nb)O3-PbTiO3 (PMN-PT) with three different PbTiO3 contents (PMN-28PT, PMN-29.5PT, and PMN-30PT). Electric-field controlled rhombohedral to...

  • Theoretical design of GaN/ferroelectric heterostructure: Toward a strained semiconductor on ferroelectrics. Jihua Zhang; Chuanren Yang; Song Wu; Ying Liu; Hongwei Chen; Wanli Zhang; Yanrong Li // Applied Physics Letters;9/21/2009, Vol. 95 Issue 12, p122101 

    Ferroelectric/semiconductor heterostructures are of great interest for future electronic devices. This letter examined the material parameters and carrier distributions of an AlGaN(0001)/GaN(0001)/BaTiO3(111) double heterostructure by combining first principles and charge control model. Results...

  • Direct patterning of solution-processed organic thin-film transistor by selective control of solution wettability of polymer gate dielectric. Fujisaki, Yoshihide; Ito, Hiroshi; Nakajima, Yoshiki; Nakata, Mitsuru; Tsuji, Hiroshi; Yamamoto, Toshihiro; Furue, Hirokazu; Kurita, Taiichiro; Shimidzu, Naoki // Applied Physics Letters;4/15/2013, Vol. 102 Issue 15, p153305 

    A simple direct patterning method for solution-processable organic semiconductors (OSCs) is demonstrated. The solution-wettable and nonwettable regions of a polymer gate dielectric layer were selectively controlled by a short tetrafluoromethane gas plasma treatment, and we precisely patterned...

  • Structural, ferroelectric, dielectric, and magnetic properties of BiFeO3/Pb(Zr0.5,Ti0.5)O3 multilayer films derived by chemical solution deposition. Li, Y. W.; Sun, J. L.; Chen, J.; Meng, X. J.; Chu, J. H. // Applied Physics Letters;10/31/2005, Vol. 87 Issue 18, p182902 

    BiFeO3/Pb(Zr0.5,Ti0.5)O3 (BFO/PZT) multilayer films have been grown on platinum-coated silicon substrate by chemical solution deposition. The remnant polarization is about 12 μC/cm2, which is much bigger than most of pure BFO thin films. P-E measurement shows that there are more obstacles...

  • Conditions for attaining the maximum values of thermoelectric power in intermetallic semiconductors of the MgAgAs structural type. Romaka, V. A.; Fruchart, D.; Stadnyk, Yu. V.; Tobola, J.; Gorelenko, Yu. K.; Shelyapina, M. G.; Romaka, L. P.; Chekurin, V. F. // Semiconductors;Nov2006, Vol. 40 Issue 11, p1275 

    A condition for attaining the maximum values of thermoelectric power Z* in intermetallic semiconductors of the MgAgAs structural type consists in heavy doping of these semiconductors with donor and/or acceptor impurities with concentrations at which the Fermi level is pinned at the mobility...

  • Thermoelectric properties of and devices based on free-standing GaN. Yamaguchi, Shigeo; Izaki, Ryohei; Kaiwa, Nakaba; Yamamoto, Atsushi // Applied Physics Letters;6/20/2005, Vol. 86 Issue 25, p252102 

    We have studied the thermoelectric properties of free-standing GaN and fabricated a themoelectric power device using this GaN. The electrical resistivity ρ increased and the Seebeck coefficient α slightly increased with increasing temperature in the range from 373 K to 973 K. The power...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics