Mobility enhancement in amorphous InGaZnO thin-film transistors by Ar plasma treatment

Kang, Jung Han; Namkyu Cho, Edward; Eun Kim, Chang; Lee, Min-Jung; Jeong Lee, Su; Myoung, Jae-Min; Yun, Ilgu
June 2013
Applied Physics Letters;6/3/2013, Vol. 102 Issue 22, p222103
Academic Journal
The effects of Ar plasma treatment on the back-channel of amorphous InGaZnO (a-IGZO) thin-film transistors are investigated. A decrease in metallic ion-oxygen bonding in the Ar plasma-treated a-IGZO channel layer was observed by X-ray photoelectron spectroscopy (XPS) depth profile analysis. An increase in the channel charge carrier concentration is estimated from the increased oxygen vacancy atomic ratio using XPS curve decomposition analysis. The plasma-treated area of the a-IGZO back-channel is varied with a photoresist screening layer with a varied open window length (Lp). From the Lp-dependent channel resistance analysis, a carrier concentration-dependent field-effect mobility enhancement is observed.


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