TITLE

On the importance of non-thermal far-field blooming in broad-area high-power laser diodes

AUTHOR(S)
Piprek, Joachim; Simon Li, Z. M.
PUB. DATE
June 2013
SOURCE
Applied Physics Letters;6/3/2013, Vol. 102 Issue 22, p221110
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
High-power broad-area laser diodes often suffer from a widening of the slow-axis far-field with increasing current (lateral far-field blooming). This effect is commonly attributed to self-heating. Utilizing self-consistent electro-thermal-optical simulations, we analyze previous experimental investigations of 970 nm broad-area GaAs-based Fabry-Perot lasers and reproduce the blooming mechanism in good agreement with the measurements. The simulations reveal that a substantial part of the far field blooming is not caused by self-heating but by increasing carrier and gain non-uniformity in the quantum wells.
ACCESSION #
88041272

 

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