TITLE

Amorphous InGaZnO ultraviolet phototransistors with double-stack Ga2O3/SiO2 dielectric

AUTHOR(S)
Chang, T. H.; Chiu, C. J.; Chang, S. J.; Tsai, T. Y.; Yang, T. H.; Huang, Z. D.; Weng, W. Y.
PUB. DATE
June 2013
SOURCE
Applied Physics Letters;6/3/2013, Vol. 102 Issue 22, p221104
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
This study investigates the electrical performance of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors with Ga2O3 gate dielectric and applied on deep-ultraviolet phototransistors. To reduce the leakage current, we introduce the SiO2 interlayer dielectric, which effectively reduces the off-current. Under the illumination of 250 nm, the measured responsivity of the device was 3.2 A/W at an applied gate bias of 0 V. The photo-generated carriers were injected into the channel by the applied electric field and Fowler-Nordheim tunneling. A large photocurrent and responsivity can be obtained which is attributed to the high mobility of the a-IGZO channel.
ACCESSION #
88041267

 

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