TITLE

Low temperature boron doped diamond

AUTHOR(S)
Zeng, Hongjun; Arumugam, Prabhu U.; Siddiqui, Shabnam; Carlisle, John A.
PUB. DATE
June 2013
SOURCE
Applied Physics Letters;6/3/2013, Vol. 102 Issue 22, p223108
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Low temperature boron doped diamond (LT-BDD) film deposited under 600 °C (460 °C minimum) has been reported. Study reveals that the deposition temperature and boron dopant cause nanocrystalline diamond (NCD) instead of ultrananocrystalline diamond (UNCD®). Unlike conventional NCD, LT-BDD has faster renucleation rate, which ensures a low surface roughness (approximately 10 nm at 0.6 μm thickness). The overall characteristics of LT-BDD are mixed with the characteristics of conventional NCD and UNCD. Raman spectrum and electrochemical characterization prove that the quality of LT-BDD is similar to those grown under 650-900 °C. LT-BDD enables diamond applications on microelectromechanical systems, bio- and optical technologies.
ACCESSION #
88041232

 

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