Submicron ferroelectric domain structures tailored by high-voltage scanning probe microscopy

Rosenman, G.; Urenski, P.; Agronin, A.; Rosenwaks, Y.; Molotskii, M.
January 2003
Applied Physics Letters;1/6/2003, Vol. 82 Issue 1, p103
Academic Journal
We have developed a high voltage atomic force microscope that allowed us to tailor submicrometer ferroelectric domains in bulk ferroelectrics. One- and two-dimensional domain configurations have been fabricated in LiNbO[sub 3], RbTiOPO[sub 4], and RbTiOAsO[sub 4] ferroelectric crystals. It is found that the application of superhigh electric fields (reaching 5 × 10[sup 7] V/cm) by the atomic force microscope tip leads to a unique polarization reversal mechanism, and open the way to a technology for photonic and acoustic devices.


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