TITLE

Nanoindentation of silicon nitride: A multimillion-atom molecular dynamics study

AUTHOR(S)
Walsh, Phillip; Omeltchenko, Andrey; Kalia, Rajiv K.; Nakano, Aiichiro; Vashishta, Priya; Saini, Subhash
PUB. DATE
January 2003
SOURCE
Applied Physics Letters;1/6/2003, Vol. 82 Issue 1, p118
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Nanoindentation of crystalline and amorphous silicon nitride films is studied using 10-million-atom molecular dynamics simulations. A rigid pyramid-shaped indenter tip is used. Load-displacement curves are computed and are used to derive hardness and elastic moduli of the simulated crystalline and amorphous films. Computer images of local pressure distributions and configuration snapshots show that plastic deformation in the film extends to regions far from the actual indent.
ACCESSION #
8781296

 

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