Time of flight secondary ion mass spectrometry study of silicon nanoclusters embedded in thin silicon oxide layers

Perego, M.; Ferrari, S.; Spiga, S.; Bonera, E.; Fanciulli, M.; Soncini, V.
January 2003
Applied Physics Letters;1/6/2003, Vol. 82 Issue 1, p121
Academic Journal
Si nanoclusters have been formed by 5 keV Si[sup +] implantation at a fluence of 1 × 10[sup 16] atoms/cm² into a 200 Å thin thermally grown SiO[sub 2] film on Si (100), followed by thermal treatment at 1000 °C with different annealing times. All the annealed samples show a broad photoluminescence spectrum with increasing intensity as function of annealing time. The use of a dual beam time of flight secondary ion mass spectrometry in negative mode with Cs[sup +] ions at low energy for sputtering allows us to observe variations in Si[sup -] signal due to excess of silicon atoms introduced by implantation. With the high sensitivity achieved using this instrumental configuration it is possible to follow Si[sup -, sub n] signals which give information about the chemical enviroment of the Si atoms. The possibility of studying the time evolution of the nucleation and growth of nanoclusters has been investigated.


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