TITLE

Measurement of temperature distribution in multifinger AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy

AUTHOR(S)
Kuball, M.; Rajasingam, S.; Sarua, A.; Uren, M. J.; Martin, T.; Hughes, B. T.; Hilton, K. P.; Balmer, R. S.
PUB. DATE
January 2003
SOURCE
Applied Physics Letters;1/6/2003, Vol. 82 Issue 1, p124
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The temperature distribution in multifinger high-power AlGaN/GaN heterostructure field-effect transistors grown on SiC substrates was studied. Micro-Raman spectroscopy was used to measure channel temperature with 1 µm spatial resolution, not possible using infrared techniques. Thermal resistance values were determined for four different device layouts with varying number of fingers, finger width, and spacing. The experimental thermal resistance was in fair agreement to that predicted by three-dimensional finite difference heat dissipation simulations. Uncertainties in thermal properties of this device system made simulation less reliable than experiment.
ACCESSION #
8781294

 

Related Articles

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics