Direct evidence of a buried homojunction in Cu(In,Ga)Se[sub 2] solar cells

Jiang, Chun-Sheng; Hasoon, F. S.; Moutinho, H. R.; Al-Thani, H. A.; Romero, M. J.; Al-Jassim, M. M.
January 2003
Applied Physics Letters;1/6/2003, Vol. 82 Issue 1, p127
Academic Journal
The built-in electrical potential of Cu(In,Ga)Se[sub 2] (CIGS) solar cells was measured quantitatively and resolved spatially using scanning Kelvin probe microscopy. Profiles of the electrical potential along cross sections of the device demonstrate that the p-n junction is a buried homojunction, and the p/n boundary is located 30-80 nm from the CIGS/CdS interface in the CIGS film. The built-in electric field terminates at the CIGS/CdS interface, indicating that the CdS and ZnO layers of the device structure are inactive for the collection of photoexcited carriers.


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