Nonvolatile memory element based on a ferroelectric polymer Langmuir–Blodgett film

Reece, Timothy J.; Ducharme, Stephen; Sorokin, A. V.; Poulsen, Matt
January 2003
Applied Physics Letters;1/6/2003, Vol. 82 Issue 1, p142
Academic Journal
We report the operation of a potential nonvolatile bistable capacitor memory element consisting of a metal gate, a 170 nm thick ferroelectric Langmuir-Blodgett film ofvinylidene fluoride (70%) with trifluoroethylene (30%) copolymer, and a 100 nm thick silicon-oxide insulating layer, all deposited on an n-type silicon semiconductor substrate. The device exhibited clear capacitance hysteresis as the gate voltage was cycled between ±25 V, with a capacitance dynamic range of 8:1 and threshold voltage shift of 2.8 V.


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