TITLE

High quality factor nonpolar GaN photonic crystal nanocavities

AUTHOR(S)
Wu, Tzeng-Tsong; Lo, Sheng-Yun; Huang, Huei-Min; Tsao, Che-Wei; Lu, Tien-Chang; Wang, Shing-Chung
PUB. DATE
May 2013
SOURCE
Applied Physics Letters;5/13/2013, Vol. 102 Issue 19, p191116
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
High quality factor a-plane nonpolar GaN two-dimensional photonic crystal (PC) nanocavities on r-plane sapphire substrates have been demonstrated. Nonpolar GaN PC nanocavities on a thin membrane structure were realized by using e-beam lithography to define the PC patterns and focused-ion beam milling to fabricate the suspended thin membrane. A dominant resonant mode at 388 nm with a high quality factor of approximately 4300 has been demonstrated at 77 K by the micro-photoluminescence system. Moreover, the degree of polarization of the emission from the non-polar GaN PC nanocavity was measured to be 64% along the m crystalline direction.
ACCESSION #
87655961

 

Related Articles

  • Photoluminescence of low-energy ion bombarded silicon. Davis, R. J.; Habermeier, H.-U.; Weber, J. // Applied Physics Letters;12/15/1985, Vol. 47 Issue 12, p1295 

    Using photoluminescence we have examined defects introduced into silicon by low-energy inert gas ion bombardment (ion beam etching or ion beam milling, with Ne[sup +], Ar[sup +], Kr[sup +], and Xe[sup +]) in the 200-2000 eV ion energy range. The spectra indicate the presence of noble gas...

  • Room-temperature visible and infrared photoluminescence from Pr-implanted GaN films by... Chao, L. C.; Steckl, A. J. // Applied Physics Letters;4/19/1999, Vol. 74 Issue 16, p2364 

    Investigates room-temperature visible and infrared photoluminescence (PL) from Pr-implanted GaN films by focused-ion-beam direct wire. Observation of a strong room-temperature emission after annealing; Obtaining of essentially identical PL spectra.

  • Violet/blue emission from hydrogenated amorphous carbon films deposited from energetic CH[sub 3][sup +] ions and ion bombardment. Liao, Meiyong; Feng, Zhihong; Chai, Chunlin; Yang, Shaoyan; Liu, Zhikai; Wang, Zhanguo // Journal of Applied Physics;2/15/2002, Vol. 91 Issue 4, p1891 

    Considering the complexity of the general plasma techniques, pure single CH[sub 3][sup +] ion beams were selected for the deposition of hydrogenated amorphous (a) carbon films with various ion energies and temperatures. Photoluminescence (PL) measurements have been performed on the films and...

  • Characterization of subsurface damage in GaAs processed by Ga+ focused ion-beam-assisted Cl2 etching using photoluminescence. Taneya, M.; Sugimoto, Y.; Akita, K. // Journal of Applied Physics;8/1/1989, Vol. 66 Issue 3, p1375 

    Presents information on a study which investigated the subsurface damage in gallium (Ga) arsenide (GaAs) processed by a Ga[sup+] focused on ion-beam-assisted Cl[sub2] etching by photoluminescence (PL) measurement. Examination of PL spectra; Analysis of the PL intensity decrease caused by the...

  • Depth profile of the implantation-enhanced intermixing of Ga...focused ion beam in AlAs/GaAs... Eshlaghi, Soheyla; Meier, C. // Journal of Applied Physics;12/1/1999, Vol. 86 Issue 11, p6605 

    Presents information on a study which determined the implantation-induced intermixing depth profile for ions by photoluminescence measurements on samples containing quantum wells. Application of focused ion beam implantation method; Effect of intermixing to the direction of depth dependence of...

  • Channeling as a mechanism for dry etch damage in GaN. Haberer, Elaine D.; Chen, Ching-Hui; Ching-Hui Chen; Abare, Amber; Hansen, Monica; Denbaars, Steve; Coldren, Larry; Mishra, Umesh; Hu, Evelyn L. // Applied Physics Letters;6/26/2000, Vol. 76 Issue 26 

    Etch damage of GaN was investigated using a quantum-well probe structure. A clear decrease in photoluminescence (PL) intensity was observed and was aggravated with increasing ion-beam voltage. The magnitude of decrease in PL intensity was much larger than expected, even greater than for GaAs...

  • Area-selective formation of Si nanocrystals by assisted ion-beam irradiation during dual-ion-beam deposition. Jae Kwon Kim; Kyu Man Cha; Jung Hyun Kang; Yong Kim; Jae-Yel Yi; Tae Hun Chung; Hong Jun Bark // Applied Physics Letters;8/30/2004, Vol. 85 Issue 9, p1595 

    We investigate the effect of Ar-ion-beam irradiation during the deposition of SiOx films by dual-ion-beam deposition system. Ion-beam irradiation effectively increases the oxygen content, x, in SiOx films indicative of the preferential sputtering of Si phase as compared to SiO2 phase in SiOx...

  • Enhanced photoluminescence from gallium arsenide semiconductor coated with Au nanoparticles. Xiuli Zhou; Qiangmin Wei; Lumin Wang; Joshi, Bhuwan; Qihuo Wei; Kai Sun // Applied Physics A: Materials Science & Processing;Aug2009, Vol. 96 Issue 3, p637 

    We demonstrate a method for improving photoluminescence of gallium arsenide semiconductor by simply coating a thin layer of Au nanoparticles on its surface. Further focused ion beam bombardment at the sputter-coated Au film was conducted to control the size, the distribution, and the morphology...

  • Ultrafast photoluminescence from freestanding Si nanocrystals. Kim, Sung; Shin, Dong Hee; Choi, Suk-Ho // Applied Physics Letters;6/18/2012, Vol. 100 Issue 25, p253103 

    SiO1.2/SiO2 multilayers were grown on n-type (100) Si wafers by ion beam sputtering and subsequently annealed at 1100 °C to form SiO2-embedded Si (S-Si) nanocrystals (NCs). The SiO2 matrix was then removed from S-Si NCs by chemical treatments to prepare freestanding Si (F-Si) NCs. The...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics