High quality factor nonpolar GaN photonic crystal nanocavities

Wu, Tzeng-Tsong; Lo, Sheng-Yun; Huang, Huei-Min; Tsao, Che-Wei; Lu, Tien-Chang; Wang, Shing-Chung
May 2013
Applied Physics Letters;5/13/2013, Vol. 102 Issue 19, p191116
Academic Journal
High quality factor a-plane nonpolar GaN two-dimensional photonic crystal (PC) nanocavities on r-plane sapphire substrates have been demonstrated. Nonpolar GaN PC nanocavities on a thin membrane structure were realized by using e-beam lithography to define the PC patterns and focused-ion beam milling to fabricate the suspended thin membrane. A dominant resonant mode at 388 nm with a high quality factor of approximately 4300 has been demonstrated at 77 K by the micro-photoluminescence system. Moreover, the degree of polarization of the emission from the non-polar GaN PC nanocavity was measured to be 64% along the m crystalline direction.


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