TITLE

Effect of polarization on intersubband transition in AlGaN/GaN multiple quantum wells

AUTHOR(S)
Chen, G.; Li, Z. L.; Wang, X. Q.; Huang, C. C.; Rong, X.; Sang, L. W.; Xu, F. J.; Tang, N.; Qin, Z. X.; Sumiya, M.; Chen, Y. H.; Ge, W. K.; Shen, B.
PUB. DATE
May 2013
SOURCE
Applied Physics Letters;5/13/2013, Vol. 102 Issue 19, p192109
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Intersubband transitions (ISBT) of AlGaN/GaN multiple quantum wells (MQWs) with wavelength towards atmospheric window (3-5 μm) have been investigated. A Ga-excess epitaxial method is used in the molecular beam epitaxy leading to ultra-sharp interface and negligible elements inter-diffusion. The absorption peak wavelength of the ISBT was successfully tuned in the range of 3-4 μm by modifying the GaN well thickness from 2.8 to 5.5 nm. It was further found that the polarization charge density of the AlGaN/GaN MQWs was about -0.034 C/m2 which gave rise to blueshift of the ISBT wavelength and thus partially compensated its redshift with increasing well thickness.
ACCESSION #
87655938

 

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