Electron and hole mobilities at a Si/SiO2 interface with giant valley splitting

Niida, Yoshitaka; Takashina, Kei; Ono, Yukinori; Fujiwara, Akira; Hirayama, Yoshiro
May 2013
Applied Physics Letters;5/13/2013, Vol. 102 Issue 19, p191603
Academic Journal
We examine the electron mobility and hole mobility at the Si/buried oxide (BOX) interface at which the valley splitting of the electron system is strongly enhanced, and compare the values observed to those at a standard Si/thermal oxide (T-SiO2) interface in the same silicon-on-insulator device. In contrast to the electron mobility, which is lower at the Si/BOX interface, the hole mobility at the Si/BOX interface is found to be slightly higher than that at the Si/T-SiO2 interface.


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