Probing hot electron transport across an epitaxial Schottky interface of SrRuO3/Nb:SrTiO3

Roy, S.; Kamerbeek, A. M.; Rana, K. G.; Parui, S.; Banerjee, T.
May 2013
Applied Physics Letters;5/13/2013, Vol. 102 Issue 19, p192909
Academic Journal
SrRuO3 (SRO), a conducting transition metal oxide, is commonly used for engineering domains in BiFeO3. Oxide devices can be envisioned by integrating SRO with an oxide semiconductor as Nb doped SrTiO3 (Nb:STO). Using a three-terminal device configuration, we study vertical transport in a SRO/Nb:STO device at the nanoscale and find local differences in transport which originate due to the high selectivity of SRO growth on the underlying surface terminations in Nb:STO. This causes a change in the interface energy band characteristics and is explained by the differences in the spatial distribution of the interface-dipoles at the local Schottky interface.


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