Long electron spin coherence in ion-implanted GaN: The role of localization

Buß, J. H.; Rudolph, J.; Shvarkov, S.; Hardtdegen, H.; Wieck, A. D.; Hägele, D.
May 2013
Applied Physics Letters;5/13/2013, Vol. 102 Issue 19, p192102
Academic Journal
The impact of Ga and Au ion implantation on the electron spin dynamics in bulk wurtzite GaN is studied by time-resolved Kerr-rotation spectroscopy. The spin relaxation time increases strongly by up to a factor of 20 for increasing implantation doses. This drastic increase is caused by a transition from delocalized to localized electrons. We find a characteristic change in the magnetic field dependence of spin relaxation that can be used as a sensitive probe for the degree of localization.


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