Spatially-resolved spectroscopic measurements of Ec - 0.57 eV traps in AlGaN/GaN high electron mobility transistors

Cardwell, D. W.; Sasikumar, A.; Arehart, A. R.; Kaun, S. W.; Lu, J.; Keller, S.; Speck, J. S.; Mishra, U. K.; Ringel, S. A.; Pelz, J. P.
May 2013
Applied Physics Letters;5/13/2013, Vol. 102 Issue 19, p193509
Academic Journal
Simultaneous temperature-dependent measurements of resistance transients (RTs) and spatially resolved surface potential transients were made after bias switching on AlGaN/GaN high electron mobility transistors (HEMTs). We find an Ec - 0.57 eV trap, previously correlated with HEMT degradation, located in the GaN buffer and not in the AlGaN barrier or at the AlGaN surface. The amplitude of the Ec - 0.57 eV trap in RTs depends strongly on the Fe-concentration in the GaN buffer. Filling of this trap occurs only under bias conditions where electric fields penetrate into the GaN buffer.


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