Effect of proton irradiation on AlGaN/GaN micro-Hall sensors

Abderrahmane, A.; Koide, S.; Okada, H.; Takahashi, H.; Sato, S.; Ohshima, T.; Sandhu, A.
May 2013
Applied Physics Letters;5/13/2013, Vol. 102 Issue 19, p193510
Academic Journal
The magnetoelectric properties of AlGaN/GaN micro-Hall effect sensors were studied after 380 keV proton irradiation. After irradiation the current-voltage measurements, stability of the magnetic sensitivity of the sensors, and the sheet electron density were degraded with a dramatic decrease of the electron mobility at high temperatures. Raman spectroscopy showed a degradation in the crystalline quality of GaN crystal, but there was no change in the strain.


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