Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition

Amani, Matin; Chin, Matthew L.; Birdwell, A. Glen; O'Regan, Terrance P.; Najmaei, Sina; Liu, Zheng; Ajayan, Pulickel M.; Lou, Jun; Dubey, Madan
May 2013
Applied Physics Letters;5/13/2013, Vol. 102 Issue 19, p193107
Academic Journal
Molybdenum disulfide (MoS2) field effect transistors (FET) were fabricated on atomically smooth large-area single layers grown by chemical vapor deposition. The layer qualities and physical properties were characterized using high-resolution Raman and photoluminescence spectroscopy, scanning electron microscopy, and atomic force microscopy. Electronic performance of the FET devices was measured using field effect mobility measurements as a function of temperature. The back-gated devices had mobilities of 6.0 cm2/V s at 300 K without a high-κ dielectric overcoat and increased to 16.1 cm2/V s with a high-κ dielectric overcoat. In addition the devices show on/off ratios ranging from 105 to 109.


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