Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors

Wirths, S.; Tiedemann, A. T.; Ikonic, Z.; Harrison, P.; Holländer, B.; Stoica, T.; Mussler, G.; Myronov, M.; Hartmann, J. M.; Grützmacher, D.; Buca, D.; Mantl, S.
May 2013
Applied Physics Letters;5/13/2013, Vol. 102 Issue 19, p192103
Academic Journal
In this letter, we propose a heterostructure design for tunnel field effect transistors with two low direct bandgap group IV compounds, GeSn and highly tensely strained Ge in combination with ternary SiGeSn alloy. Electronic band calculations show that strained Ge, used as channel, grown on Ge1-xSnx (x > 9%) buffer, as source, becomes a direct bandgap which significantly increases the tunneling probability. The SiGeSn ternaries are well suitable as drain since they offer a large indirect bandgap. The growth of such heterostructures with the desired band alignment is presented. The crystalline quality of the (Si)Ge(Sn) layers is similar to state-of-the-art SiGe layers.


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