TITLE

InGaN/GaN light-emitting diode with a polarization tunnel junction

AUTHOR(S)
Zhang, Zi-Hui; Tiam Tan, Swee; Kyaw, Zabu; Ji, Yun; Liu, Wei; Ju, Zhengang; Hasanov, Namig; Wei Sun, Xiao; Volkan Demir, Hilmi
PUB. DATE
May 2013
SOURCE
Applied Physics Letters;5/13/2013, Vol. 102 Issue 19, p193508
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report InGaN/GaN light-emitting diodes (LED) comprising in situ integrated p+-GaN/InGaN/n+-GaN polarization tunnel junctions. Improved current spreading and carrier tunneling probability were obtained in the proposed device architecture, leading to the enhanced optical output power and external quantum efficiency. Compared to the reference InGaN/GaN LEDs using the conventional p+/n+ tunnel junction, these devices having the polarization tunnel junction show a reduced forward bias, which is attributed to the polarization induced electric fields resulting from the in-plane biaxial compressive strain in the thin InGaN layer sandwiched between the p+-GaN and n+-GaN layers.
ACCESSION #
87655885

 

Related Articles

  • Polarization ratio enhancement of a-plane GaN light emitting diodes by asymmetric two-dimensional photonic crystals. Yen Chou; Hsiang-Wei Li; Yu-Feng Yin; Yu-Ting Wang; Yen-Chen Lin; Da-Wei Lin; Yuh-Renn Wu; Hao-Chung Kuo; Jian Jang Huang // Journal of Applied Physics;2014, Vol. 115 Issue 19, p193107-1 

    Fabricating photonic crystals (PhCs) on GaN based non-polar light emitting diodes (LEDs) is an effective way to increase light extraction and meanwhile to preserve or improve polarization ratio. In this work, a-plane GaN LEDs with two-dimensional PhCs were demonstrated. With the E // m polarized...

  • Publisher's Note: 'High optical polarization ratio from semipolar ([formula]) blue-green InGaN/GaN light-emitting diodes' [Appl. Phys. Lett. 99, 051109 (2011)]. Zhao, Yuji; Tanaka, Shinichi; Yan, Qimin; Huang, Chia-Yen; Chung, Roy B.; Pan, Chih-Chien; Fujito, Kenji; Feezell, Daniel; Van de Walle, Chris G.; Speck, James S.; DenBaars, Steven P.; Nakamura, Shuji // Applied Physics Letters;11/28/2011, Vol. 99 Issue 22, p229902 

    A correction to the article "High optical polarization ratio from semipolar formula blue-green InGaN/GaN light-emitting diodes" that was published online in the November 29, 2011 issue is presented.

  • Midinfrared emission from InGaN/GaN-based light-emitting diodes. Hofstetter, Daniel; Faist, Jérome; Bour, David P. // Applied Physics Letters;3/20/2000, Vol. 76 Issue 12, p1495 

    Midinfrared emission on violet, blue, and green InGaN light-emitting diodes has been measured between 85 and 300 K for various injection current densities. We found that the diode with the highest In composition in the active region had the shortest midinfrared emission wavelength and vice...

  • Orientation of dipole molecules and clusters upon adiabatic entry into an external field. Bulthuis, J.; Becker, J. A.; Moro, R.; Kresin, V. V. // Journal of Chemical Physics;7/14/2008, Vol. 129 Issue 2, p024702 

    The induced polarization of a beam of polar clusters or molecules passing through an electric or magnetic field region differs from the textbook Langevin–Debye susceptibility. This distinction, which is important for the interpretation of deflection and focusing experiments, arises...

  • Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor. Hanbicki, A. T.; Jonker, B. T.; Itskos, G.; Kioseoglou, G.; Petrou, A. // Applied Physics Letters;2/18/2002, Vol. 80 Issue 7, p1240 

    We report electrical spin injection from a ferromagnetic metal contact into a semiconductor light emitting diode structure with an injection efficiency of 30% which persists to room temperature. The Schottky barrier formed at the Fe/AlGaAs interface provides a natural tunnel barrier for...

  • Biomaterials: Super-reflective fish skin.  // Nature;10/25/2012, Vol. 490 Issue 7421, p449 

    The article reports on the study conducted by Nicholas Roberts of the University of Bristol, which indicates that the skin of certain fishes including Atlantic herring and sprat can reflect light without polarizing it, making them good for optical devices such as light-emitting diodes.

  • Polarization effect in light emitting diodes with ordered GaInP active layers. Greger, E.; Gulden, K.H. // Applied Physics Letters;4/22/1996, Vol. 68 Issue 17, p2383 

    Presents the polarization effects in light emitting diodes with ordered AlGaInP/GaInP double heterostructures grown by metal organic vapor phase epitaxy. Display of polarized light output by the devices; Independence of the polarization; Use of the effects as a means for polarization control in...

  • Effective ionic charge polarization using typical supporting electrolyte and charge injection phenomena in molecularly doped polymer light-emitting diodes. Itoh, Eiji; Yamashita, Takanori; Miyairi, Keiichi // Journal of Applied Physics;11/15/2002, Vol. 92 Issue 10, p5971 

    An effective method of enhancing charge injection and electroluminescence efficiency of polymer-based light-emitting diodes is introduced. Spin-coated films of poly (N-vinylcarbazole) blended with electron-transport material (Bu-PBD), laser dye (Coumarin6), and the typical supporting electrolyte...

  • Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodes. Kolbe, Tim; Knauer, Arne; Chua, Chris; Yang, Zhihong; Kueller, Viola; Einfeldt, Sven; Vogt, Patrick; Johnson, Noble M.; Weyers, Markus; Kneissl, Michael // Applied Physics Letters;12/26/2011, Vol. 99 Issue 26, p261105 

    The temperature and strain dependence of the polarization of the in-plane electroluminescence of (0001) orientated (In)(Al)GaN multiple quantum well light emitting diodes in the ultraviolet spectral range has been investigated. For light emitting diodes with emission wavelength shorter than 300...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics