InGaN/GaN light-emitting diode with a polarization tunnel junction

Zhang, Zi-Hui; Tiam Tan, Swee; Kyaw, Zabu; Ji, Yun; Liu, Wei; Ju, Zhengang; Hasanov, Namig; Wei Sun, Xiao; Volkan Demir, Hilmi
May 2013
Applied Physics Letters;5/13/2013, Vol. 102 Issue 19, p193508
Academic Journal
We report InGaN/GaN light-emitting diodes (LED) comprising in situ integrated p+-GaN/InGaN/n+-GaN polarization tunnel junctions. Improved current spreading and carrier tunneling probability were obtained in the proposed device architecture, leading to the enhanced optical output power and external quantum efficiency. Compared to the reference InGaN/GaN LEDs using the conventional p+/n+ tunnel junction, these devices having the polarization tunnel junction show a reduced forward bias, which is attributed to the polarization induced electric fields resulting from the in-plane biaxial compressive strain in the thin InGaN layer sandwiched between the p+-GaN and n+-GaN layers.


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