Non-volatile switching characteristics in wet-deposited Ag2Se/GeSe double layers for resistive random access memory applications

Nam, Ki-Hyun; Kim, Jang-Han; Cho, Won-Ju; Chung, Hong-Bay
May 2013
Applied Physics Letters;5/13/2013, Vol. 102 Issue 19, p192106
Academic Journal
The resistance switching characteristics of resistive random access memory (ReRAM) based on amorphous GeSe thin films have been demonstrated by using Al/Ag2Se/GeSe/Pt structure. The Ag2Se layer that serves as the metal ionic source of GeSe switching medium was formed by a very simple wet-deposition process in AgNO3 solution. The X-ray diffraction and Auger electron spectroscopy analysis revealed the existence of the Ag2Se layer. As a result, an extremely low-voltage set/reset operation of less than 0.2 V, a high on-off resistance ratio larger than 103, good endurance characteristics, and excellent long-term reliability were achieved by the proposed Ag2Se/GeSe bilayered ReRAMs using the wet-deposition process.


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