TITLE

Non-volatile switching characteristics in wet-deposited Ag2Se/GeSe double layers for resistive random access memory applications

AUTHOR(S)
Nam, Ki-Hyun; Kim, Jang-Han; Cho, Won-Ju; Chung, Hong-Bay
PUB. DATE
May 2013
SOURCE
Applied Physics Letters;5/13/2013, Vol. 102 Issue 19, p192106
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The resistance switching characteristics of resistive random access memory (ReRAM) based on amorphous GeSe thin films have been demonstrated by using Al/Ag2Se/GeSe/Pt structure. The Ag2Se layer that serves as the metal ionic source of GeSe switching medium was formed by a very simple wet-deposition process in AgNO3 solution. The X-ray diffraction and Auger electron spectroscopy analysis revealed the existence of the Ag2Se layer. As a result, an extremely low-voltage set/reset operation of less than 0.2 V, a high on-off resistance ratio larger than 103, good endurance characteristics, and excellent long-term reliability were achieved by the proposed Ag2Se/GeSe bilayered ReRAMs using the wet-deposition process.
ACCESSION #
87655871

 

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