Revisiting the 'In-clustering' question in InGaN through the use of aberration-corrected electron microscopy below the knock-on threshold

Baloch, Kamal H.; Johnston-Peck, Aaron C.; Kisslinger, Kim; Stach, Eric A.; Gradecˇak, Silvija
May 2013
Applied Physics Letters;5/13/2013, Vol. 102 Issue 19, p191910
Academic Journal
The high intensity of light emitted in InxGa1-xN/GaN heterostructures has been generally attributed to the formation of indium-rich clusters in InxGa1-xN quantum wells (QWs). However, there is significant disagreement about the existence of such clusters in as-grown InxGa1-xN QWs. We employ atomically resolved CS-corrected scanning transmission electron microscopy and electron energy loss spectroscopy at 120 kV-which we demonstrate to be below the knock-on displacement threshold-and show that indium clustering is not present in as-grown In0.22Ga0.78N QWs. This artifact-free, atomically resolved method can be employed for investigating compositional variations in other InxGa1-xN/GaN heterostructures.


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