TITLE

A model for crystal growth during metal induced lateral crystallization of amorphous silicon

AUTHOR(S)
Joshi, Amol R.; Krishnamohan, Tejas; Saraswat, Krishna C.
PUB. DATE
January 2003
SOURCE
Journal of Applied Physics;1/1/2003, Vol. 93 Issue 1, p175
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In this work a model has been proposed to predict crystal growth with metal induced lateral crystallization (MILC) of thin films of amorphous silicon (α-Si). Previous work by different groups using nickel for MILC reports crystal growth rate increasing as well as decreasing with time. Based on their experimental results, we propose that part or all of nickel in newly crystallized Si comes from the NiSi[sub 2] moving front which reduces its thickness. With a few assumptions, relation between rate of crystal growth and rate of NiSi[sub 2] thinning is obtained. Two regimes, diffusion limited growth and surface reaction limited growth are proposed for MILC to explain increasing and decreasing crystal growth rates. After calculating crystal growth as a function of time, the proposed model is compared with experimental data.
ACCESSION #
8760908

 

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